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  5mh.9a Datasheet PDF File

For 5mh.9a Found Datasheets File :: 109    Search Time::3.5ms    
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    SamHop Microelectronics...
Part No. STU16L01
OCR Text ...ting. c.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) _ _ 1 1.7 3 18 nc 7.5 v ds =50v,i d =6.5a,v gs =4.5v stu/d16l01 ver 1.0...9a v gs =10v i d =6.5a v gs =4v v gs =10v 25 20 15 10 5 1 v ds =v gs i d =250ua v gs =4.5v tj=125 c ...
Description Super high dense cell design for low RDS(ON).

File Size 121.51K  /  8 Page

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    TPA12 TPA12A

List of Unclassifed Manufacturers
Part No. TPA12 TPA12A
OCR Text ...uctive Load ILIM = 5A ILIM= 10A 5mH 15mH 50mH 150mH 500mH 1,000mH 2,500mH 2.0mH 3.0mH 5.0mH 10mH 20mH 30mH 50mH DY EA ST E AT ST (1) (2) (3) (4) Vs 50V 40V 35V 30V 25V 20V 15V 2. The amplifier can handle any EMF generating or...
Description Power Operational Amplifier

File Size 144.48K  /  5 Page

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    WFP640

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. WFP640
OCR Text ... by junction temperature 2.L=18.5mH IAS=18A,VDD=50V,RG=0 ,Starting TJ=25 3.ISD18A,di/dt300A/us,VDD<BVDSS,STARTING TJ=25 4.Pulse Test:Pulse Width300us,Duty Cycle2% 5. Essentially independent of operating temperature. This transistor is an el...
Description Silicon N-Channel MOSFET

File Size 612.86K  /  7 Page

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    IRF7341IPBF

International Rectifier
Part No. IRF7341IPBF
OCR Text ...0C Starting TJ = 25C, L = 6.5mH RG = 25, IAS = 4.7A. (See Figure 8) Pulse width 300s; duty cycle 2%. When mounted on 1 inch squa...9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d ...
Description HEXFET Power MOSFET

File Size 135.95K  /  7 Page

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    SamHop Microelectronics...
Part No. STUD20L01A
OCR Text ...ting. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) _ _ _ 1 1.8 3 22 stu/d20l01a ver 1.0 www.samhop.com.tw dec,02,2011 3 tj( c)...9a v gs =10v i d =10a v gs =4v v gs =10v 40 32 24 16 8 1 stu/d20l01a ver 1.0 www.samhop.com.tw dec...
Description Super high dense cell design for low RDS(ON).

File Size 103.26K  /  8 Page

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    Cystech Electonics Corp...
Part No. MTD07N04H8
OCR Text ...le pulse avalanche energy @ l=0.5mh, i d =20amps, v dd =50v ...9a dynamic *qg - 30.2 45 *qgs - 6.5 - *qgd - 7.0 - nc v ds =20v, i d =16a, v gs =10v...
Description N-Channel Enhancement Mode Power MOSFET

File Size 406.48K  /  9 Page

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    Wuxi NCE Power Semicond...
Part No. NCE0117
OCR Text ...n tj=25 ,v dd =50v,v g =10v,l=0.5mh,rg=25 ? nce0117 pb free product http://www.ncepower.com wuxi nce power semiconductor co., ltd page v1.0 3 test circuit 1) e ...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 341.35K  /  7 Page

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    UUSP16-152 UUSP16-203 UUSP16-303 UUSP16-402 UUSP16-802

Productwell Precision Elect.CO.,LTD
Part No. UUSP16-152 UUSP16-203 UUSP16-303 UUSP16-402 UUSP16-802
OCR Text ...CS INDUCTANCE (1-2)(4-3)@1KHz 1.5mH MIN. 4.0mH MIN. 8.0mH MIN. 20mH MIN. 30mH MIN. 2 INDUCTANCE BALANCE 40H MAX. 60H MAX. 80H MAX. 150H ...9A 1.2A 0.9A 0.5A 0.4A 4 or 4 60 Productwell Precision Elect.Co.,Ltd Kai Ping Produc...
Description DC COMMON MODE CHOKES

File Size 77.03K  /  1 Page

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    STM8319

SamHop Microelectronics Corp.
Part No. STM8319
OCR Text ...ng TJ=25C,VDD = 20V,VGS=10V,L=0.5mH. Oct,29,2007 3 www.samhop.com.tw STM8319 Ver 1.0 N-Channel 40 VGS=10V VGS=5V VGS=4.5V 2...9A 1 4 8 12 16 20 0 25 50 75 100 125 150 T j ( C ) ID, Dr...
Description Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

File Size 254.81K  /  11 Page

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    STU412S STD412S

SamHop Microelectronics Corp.
Part No. STU412S STD412S
OCR Text ... testing. d.Starting TJ=25C,L=0.5mH,RG=25,VDD=20V,VGS=10V .(See Figure13) Aug,07,2008 2 www.samhop.com.tw STU/D412S Ver 1.0 30...9A V G S =10V ID=11A RDS(on)(m ) 40 V 4. 5V GS= 30 20 V 10V GS= 10 1 1 RDS(on), On-Resis...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 247.39K  /  8 Page

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