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  4-20v Datasheet PDF File

For 4-20v Found Datasheets File :: 48562    Search Time::4.547ms    
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    FDL100N50F

Fairchild Semiconductor
Part No. FDL100N50F
OCR Text ... mosfets have over 200nsec and 4.5v/nsec respectively. therefore, it can remove additional component and improve system reliabi lity in ce...20v, i d = 50a - 95 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - ...
Description N-Channel UniFETTM FRFETMOSFET 500V, 100A, 55m

File Size 332.89K  /  8 Page

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    List of Unclassifed Man...
Part No. TRC-100S357DT TRC-100S280DT TRC-100S280ST TRC-100S420DT TRC-100S420ST
OCR Text ...6.5 67.5 36.5 ?7 .80.2 ?8.90.2 ?4.20.2 221 208 205 194 190 safety and emc compliance cl ce l 8750, l1012, csa-c22.2 no. 107.1 en 61347-1...20v a c 2 20v a c 2 77v a c 60% normalized output current pf 70% 5% 10% 15% 20% 25% 70% 80% 90% 100...
Description 100W Switch Mode Constant Current LED Drivers,Damp & Wet Location Rated

File Size 624.00K  /  3 Page

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    Diodes
Part No. DESDALC14V2LP3
OCR Text 4 - 2 1 of 5 www.diodes.com october 2014 ? diodes incorporated desdalc14v2lp3 advance information new product ...20v/ div 20ns/ div desdalc14v2lp3 document number: ds 36113 rev. 4 - 2 4 of 5 w...
Description LOW CAPACITANCE UNIDIRECTIONAL TVS DIODE

File Size 394.29K  /  5 Page

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    FGAF40N60SMD

Fairchild Semiconductor
Part No. FGAF40N60SMD
OCR Text ...c = 250 a, v ce = v ge 3.5 4.5 6.0 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v - 1.9 - v i c = 40a...20v t c = 25 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2...
Description 600V, 40A, Field Stop IGBT

File Size 1,016.83K  /  10 Page

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    Cystech Electonics Corp...
Part No. MTB20N04J3-0-T3-G
OCR Text ..., i d =10a r dson(typ) v gs =4.5v, i d =8a 20.8m g d s environment friendly grade : s for rohs compliant products, g for roh...20v, v ds =0v - - 1 v ds =40v, v gs =0v i dss - - 10 a v ds =32v, v gs =0v, t j =125...
Description N -Channel Enhancement Mode Power MOSFET

File Size 342.62K  /  9 Page

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    Cystech Electonics Corp...
Part No. MTB08N04J3-0-T3-G
OCR Text ... device is mounted on 1 in 2 fr-4 board with 2 oz. copper. *3. when the device is on the minimum pad size recommended. characte...20v, v ds =0v - - 1 v ds =32v, v gs =0v i dss - - 25 a v ds =32v, v gs =0, tj=125 c ...
Description N -Channel Enhancement Mode Power MOSFET

File Size 312.86K  /  9 Page

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    Kersemi Electronic Co.,...
Part No. IRFZ44N
OCR Text ...repetitive avalanche energy ? 9.4 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temp...20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 63 i d...
Description Advanced Process Technology

File Size 683.59K  /  8 Page

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    PMZB290UN PMZB290UN-15

NXP Semiconductors
Part No. PMZB290UN PMZB290UN-15
OCR Text ...adswitch ? switching circuits 1.4 quick reference data [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin...20v v gs gate-source voltage -8 - 8 v i d drain current v gs =4.5v; t amb =25c [1] --1a static chara...
Description 20 V, single N-channel Trench MOSFET

File Size 838.24K  /  15 Page

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