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350v s Datasheet PDF File

For 350v s Found Datasheets File :: 1215 Search Time::1.89ms
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				INFINEON[Infineon Technologies AG]
Part No.	sPW47N60C2
OCR Text	...lateau voltage Qgs Qgd Qg VDD =350v, ID =47A, VGs =0 to 10V VDD =350v, ID =47A sPW47N60C2 symbol Conditions min. Values typ. 30...s pF Effective output capacitance, 1) Co(er) V Gs=0V, V Ds=0V to 480V pF t d(on) tr t d(...
Description	for lowest Conduction Losses & fastest switching Cool MOs Power Transistor Cool MOs⑩ Power Transistor
File Size	119.94K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	sPW47N60C3
OCR Text	...lateau voltage Qgs Qgd Qg V DD=350v, ID=47A, V Gs=0 to 10V V DD=350v, ID=47A symbol g fs Ciss Coss Crss Conditions min. V Ds2I DRD...s pF Effective output capacitance, 2) Co(er) V Gs=0V, V Ds=0V to 480V pF td(on) tr td(of...
Description	for lowest Conduction Losses & fastest switching Cool MOs™ Power Transistor Cool MOs Power Transistor
File Size	240.73K / 13 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	... = 30A, diF /dt = -240A/s, VR = 350v (see Figure 10) Characteristic Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 30A, diF /dt = -240A/s, VR = 350v Forward Recovery Time IF = 30A, diF /dt ...
Description	POWER MOs V 500V 44A 0.100 Ohm Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	... = 30A, diF /dt = -240A/s, VR = 350v (see Figure 10) Characteristic Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 30A, diF /dt = -240A/s, VR = 350v Forward Recovery Time IF = 30A, diF /dt ...
Description	POWER MOs V 500V 44A 0.100 Ohm Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT50GF60B2RD APT50GF60LRD
OCR Text	... = 60A, diF /dt = -480A/s, VR = 350v Characteristic IF = 60A, TJ = 150C PR TYP MAX UNIT Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 60A, diF /dt = -480A/s, VR = 350v Fo...
Description	Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT15D60B
OCR Text	...= 15A, diF /dt = -100A /s, VR = 350v (see Figure 10) Characteristic Reverse Recovery Time, IF = 1.0A, diF/ dt = -15A /s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 15A, di F /dt = -100A /s, VR = 350v Forward Recovery Time IF = 15A, di F ...
Description	ULTRAFAsT sOFT RECOVERY RECTIFIER DIODE
File Size	54.06K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FsQ0165 FsQ0165RL FsQ0265 FsQ0265RL FsQ0365 FsQ0365RL FsQ036507 FsQ321L FsQ0165RN FsQ0265RN FsQ0365RN FsQ311 FsQ311L FsQ321
OCR Text	... Turn-On Delay Time VDD = 350v, ID = 25mA ns tr Rise Time VDD = 350v, ID = 25mA ns td(off) Turn-Off Delay Time ...s s s s (c) 2006 Fairchild semiconductor Corporation FsQ0365, FsQ0265, FsQ0165, FsQ321, FsQ311 Re...
Description	Green Mode Fairchild Power switch (FPs⑩) for Valley switching Converter
File Size	1,273.79K / 24 Page	View it Online	Download Datasheet

				SIEMENS AG
Part No.	sPD02N60
OCR Text	...urn-on delay time t d(on) v dd =350v, v gs =10v, i d =1.8a, r g =50 w - 35 - ns rise time t r - 35 - turn-off delay time t d(off) - 35 5...s t c =25c - - 1.8 a inverse diode direct current,pulsed i sm - - 3.2 inverse diode forward voltage...
Description	Cool MOs Power-Transistor( MOs 型功率晶体管)
File Size	126.27K / 9 Page	View it Online	Download Datasheet

				SIEMENS AG
Part No.	sPB02N60
OCR Text	...urn-on delay time t d(on) v dd =350v, v gs =10v, i d =1.8a, r g =50 w - 35 - ns rise time t r - 35 - turn-off delay time t d(off) - 35 5...s t c =25c - - 1.8 a inverse diode direct current,pulsed i sm - - 3.2 inverse diode forward voltage...
Description	Cool MOs Power-Transistor( MOs 型功率晶体管)
File Size	117.51K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	FsQ0165RN FsQ0265RN FsQ0365RN FsQ311
OCR Text	... Turn-On Delay Time VDD = 350v, ID = 25mA ns tr Rise Time VDD = 350v, ID = 25mA ns td(off) Turn-Off Delay Time ...s VBURH VBURL Hysteresis PROTECTION sECTION Parameter Maximum ON Time Blanking Time Detection Ti...
Description	Green Mode Fairchild Power switch (FPs) for Quasi-Resonant Operation - Low EMI and High Efficiency
File Size	1,209.76K / 19 Page	View it Online	Download Datasheet

For 350v s Found Datasheets File :: 1215 Search Time::1.89ms
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