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  26nc Datasheet PDF File

For 26nc Found Datasheets File :: 36    Search Time::2.641ms    
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    AOB27S60 AOT27S60 AOTF27S60

Alpha & Omega Semiconductors
Part No. AOB27S60 AOT27S60 AOTF27S60
OCR Text ... r ds(on),max 0.16 w q g,typ 26nc e oss @ 400v 6 m j 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot27s60l & aob27s60l & aotf27s60l symbol v ds v gs i dm i ar e ar e as mosfet dv/dt rugged...
Description 600V 27A a MOS Power Transistor

File Size 292.50K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOT27S60
OCR Text ... r ds(on),max 0.16 w q g,typ 26nc e oss @ 400v 6 m j symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction te...
Description 600V 27A a MOS TM Power Transistor

File Size 630.98K  /  6 Page

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    FDS2170N7

Fairchild Semiconductor
Part No. FDS2170N7
OCR Text ...ast switching, low gate charge (26nc typical) ? bottomless so-8 package: enhanced thermal performance in industry-standard package size so-8 bottomless 4 3 2 1 5 6 7 8 bottom-side drain contact absolute maximum ratings ...
Description 200V N-Channel PowerTrench MOSFET

File Size 160.08K  /  6 Page

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    TPCP8004

Toshiba Semiconductor
Part No. TPCP8004
OCR Text ...ing ? small gate charge: qg = 26nc (typ.) ? low drain-source on-resistance: r ds(on) = 7m (typ.) ? high forward transfer admittance: |y fs | = 21s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 30v) ? enhancement m...
Description Field Effect Transistor Silicon MOS Type

File Size 209.06K  /  7 Page

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    Icemos Technology
Part No. ICE6N70FP
OCR Text ...0.65 typ q g v ds =480v 26nc typ icemos and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years o...
Description N-Channel Enhancement Mode MOSFET

File Size 518.50K  /  9 Page

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    Icemos Technology
Part No. ICE6N70
OCR Text ...0.65 typ q g v ds =480v 26nc typ icemos and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years o...
Description N-Channel Enhancement Mode MOSFET

File Size 553.51K  /  9 Page

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    Icemos Technology
Part No. ICE6N73
OCR Text ...0.65 typ q g v ds =480v 26nc typ icemos and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years o...
Description Enhancement Mode MOSFET

File Size 779.02K  /  9 Page

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    TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
Part No. FDB2572 KDB2572
OCR Text ... v gs = 10v, i d =9a q g(tot) = 26nc (typ.), v gs = 10v low miller charge low q rr body diode uis capability (single pulse and repetitive pulse) absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 150...
Description rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A UIS Capability (Single Pulse and Repetitive Pulse)

File Size 166.67K  /  2 Page

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    SEMELAB LTD
Part No. SML1002RCN-JQR-BR1
OCR Text ... to254 1000v 5.5a 150w 2 1800pf 26nc sml1002rcn-jqr-b n-channel to254 1000v 5.5a 150w 2 1800pf 26nc searched through 910 records and found 2 products matching your criteria. top of page if you are unable to find a suitable part, please con...
Description 5.5 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

File Size 103.22K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. AOB10T60P
OCR Text 26nc e oss @ 400v 3.5 m j applications 100% uis tested 100% r g tested symbol v ds v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. maximum case-t...
Description Trench Power AlphaMOS-II technology

File Size 1,147.02K  /  7 Page

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For 26nc Found Datasheets File :: 36    Search Time::2.641ms    
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