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Qimonda
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| Part No. |
HYB25dc512160B
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| OCR Text |
...signator for memory components; 25dc: ddr sdrams at v ddq = 2.5 v; 512: 512 mbit density; 800/160: product variations 8 and 16; b: die revision; l: low power (available on request); f/c/e/t: package type fbga (lead & halogen free), ... |
| Description |
512-Mbit Double-Data-Rate SDRAM
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| File Size |
1,168.00K /
35 Page |
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New Jersey Semi-Conductor Products, Inc.
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| Part No. |
MJF122 MJF127
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| OCR Text |
...ower dissipation (note 2) @tc = 25dc derate above 25 c total power dissipation @ ta = 25c derate above 25 c operating and storage junction temperat- ure range symbol vceo vcb veb visol ic ib pd pd tj, tstg value 100 100 5 4500 5 8 0.12 30 0... |
| Description |
Complementary Power Darlingtons
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| File Size |
94.68K /
2 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
MTP5N40E
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| OCR Text |
...-source avalanche energy ? tj = 25dc ? tj = 100c repetitive pulse drain-to-source avalanche energy wdsr(1) wdsr (2) 290 46 7.4 mj thermal characteristics thermal resistance ? junction to case ? junction to ambient maximum lead temperature f... |
| Description |
N-Channel Enhancement-Mode Silicon Gate
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| File Size |
105.00K /
2 Page |
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it Online |
Download Datasheet
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