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	Part Number	Hot Search : NTE30044 60C02 KS8809 ML4775ES STTS2002 L7833 H22B3 DZ2J150
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22.8v Datasheet PDF File

For 22.8v Found Datasheets File :: 25017 Search Time::1.187ms
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				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	....8 2.0 -5.4 --- --- --- --- --- 22 6.8 2.2 7.3 5.7 9.5 12 12 14 15 6.0 2890 930 430 --- --- 4.4 5.7 2.45 --- 1.0 150 100 -100 --- 33 --- ---...8V 3.5V 3.3V 3.0V 2.8V 2.5V 1000 TOP VGS 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 2.5V ID, Drain-to-...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...e, for 10 seconds Max. -31 -22 -110 3.8 110 0.71 20 280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V...8V 16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A 0 0 10 20 30 ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	..., 6-32 or M3 srew Max. -31 -22 -110 110 0.71 20 280 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/...8V 16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A 0 0 10 20 30 ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811AV IRF7811AVTR
OCR Text	... .05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0 .244 0 .01 9 .05 0 8 1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0 6.20 0.48 1.27 8 -C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS L R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 ...
Description	Si, SMALL SIGNAL, FET, MS-012AA N-Channel Application-Specific MOSFETs
File Size	85.36K / 6 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	...RANSIENT THERMAL IMPEDANCE 5-22 IRF9150 Typical Performance Curves Unless Otherwise Specified (Continued) -100 100 ID, DRAIN CURRE...8V VGS = 7V 100s 10 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE ...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	...5 -250 100 0.600 50 100 100 100 22 - UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH Drain to Source Breakdown Voltage Gate Thr...8V 1ms OPERATION IN THIS AREA IS LIMITED BY rDS(ON) -6 PULSE DURATION = 80s DUTY CYCLE = 0.5% ...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	IRF9540 RF1S9540SM FN2282
OCR Text	... 80s DUTY CYCLE = 0.5% MAX 0.22 RESISTANCE () 1.5 0.18 VGS = -20V 1.0 0.14 0.10 0.5 0 -20 -40 -60 ID, DRAIN CURRENT (A) -80 -100 0.2 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 NOTE: Heatin...
Description	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
File Size	59.17K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	...25 -250 100 1.500 50 100 120 75 22 - UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH Drain to Source Breakdown Voltage Gate Thr...8V VGS = -9V VGS = -7V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) -4 PULSE DURATION = 8...
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	...1 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 X8 N.C N.C N.C N.C I/O7...8V DEVICE VIN/OUT Voltage on any pin relative to VSS VCC VCCQ Temperature Under Bias K9F56XXX0C-XCB0...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	...(after) Vss Draft Date Nov. 22.2002 Remark 0.6 Mar. 6.2003 0.7 Mar. 13rd 2003 0.8 Apr. 4th 2003 0.9 May. 24th...8V device(K9F56XXQ0B) : 1.70~1.95V - 3.3V device(K9F56XXU0B) : 2.7 ~ 3.6 V * Organization - Memory C...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

For 22.8v Found Datasheets File :: 25017 Search Time::1.187ms
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