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For 1device Found Datasheets File :: 474    Search Time::3.36ms    
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    SPN02N60S5

INFINEON[Infineon Technologies AG]
Part No. SPN02N60S5
OCR Text ...teau) VDD=350V, ID=0.4A V 1device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.1 Page 3 2004-03-30 SPN02N60S5 Electrical Cha...
Description Cool MOS?/a> Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
for lowest Conduction Losses

File Size 224.02K  /  9 Page

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    SPB08P06P SPP08P06P SPB08P06PSMD

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SPB08P06P SPP08P06P SPB08P06PSMD
OCR Text ... VGS = -10 V, I D = -6.2 A 1device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-11-22 Preliminary data Electrical Characteris...
Description SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30

File Size 96.10K  /  9 Page

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    SPD08P06P SPU08P06P

INFINEON[Infineon Technologies AG]
Part No. SPD08P06P SPU08P06P
OCR Text ... VGS = -10 V, I D = -6.2 A 1device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-11-22 Preliminary data Electrical Characteris...
Description Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30

File Size 113.11K  /  9 Page

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    BSS84PW

INFINEON[Infineon Technologies AG]
Part No. BSS84PW
OCR Text ...e VGS = -10 V, ID = -0.15 A 1device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2000-04-14 Preliminary data Electrical Characteris...
Description SIPMOS Small-Signal-Transistor

File Size 79.92K  /  8 Page

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    BSS84P

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BSS84P
OCR Text ...istance VGS=-10V, ID=-0.17A 1device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-09-04 Final data Electrical Characteristics, at...
Description    SIPMOS Small-Signal-Transistor

File Size 86.59K  /  8 Page

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    BSO207P

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BSO207P
OCR Text ...stance VGS =-4.5, ID =-5.7A 1device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air; t 10 sec. Page 2 2001-11-20 Preliminary data Electrical Ch...
Description OptiMOS -P Small-Signal-Transistor
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SO-8

File Size 87.24K  /  8 Page

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    BSP315P

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BSP315P
OCR Text ... VGS = -10 V, I D = -1.17 A 1device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-09-14 Preliminary data Electrical Characteris...
Description SIPMOS Small-Signal-Transistor
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.80

File Size 83.18K  /  9 Page

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    SPB18P06P SPP18P06P

INFINEON[Infineon Technologies AG]
Part No. SPB18P06P SPP18P06P
OCR Text ... VGS = -10 V, I D = -13.2 A 1device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-11-22 Preliminary data Electrical Characteris...
Description SIPMOS Power-Transistor

File Size 99.54K  /  9 Page

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    SPN04N60S5

INFINEON[Infineon Technologies AG]
Part No. SPN04N60S5
OCR Text ...teau) VDD=350V, ID=0.8A V 1device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 2C is a fixed capacitance that gives the same stored energy as C ...
Description Cool MOS?/a> Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
for lowest Conduction Losses

File Size 236.40K  /  10 Page

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    SPP10N10 SPB10N10 SPI10N10

Infineon Technologies AG
Part No. SPP10N10 SPB10N10 SPI10N10
OCR Text ...sistance VGS =10V, ID =7.8A 1device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-31 Preliminary data SPI10N10 SPP10N10,SP...
Description Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=180mOhm, 10A, NL
SIPMOS Power-Transistor
SIPMOS功率晶体

File Size 480.13K  /  8 Page

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