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Mitsubishi Electric Semiconductor
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| Part No. |
CM1200DB-34N
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| OCR Text |
...V RG(on) = 1.3, Tj = 125C, Ls = 150nh Inductive load VCC = 850V, IC = 1200A, VGE = 15V RG(off) = 3.3, Tj = 125C, Ls = 150nh Inductive load VCC = 850V, IC = 1200A, VGE = 15V RG(on) = 1.3, Tj = 125C, Ls = 150nh Inductive load
Min -- 6.0 --... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
58.25K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRGIB15B60KD1 IRGIB15B60KD1P IRGIB15B60KD1PBF
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| OCR Text |
... = 15V, RG = 22, L = 1.07mH Ls= 150nh, TJ = 25C IC = 15A, VCC = 400V VGE = 15V, RG = 22, L = 1.07mH Ls= 150nh, TJ = 25C
Ref.Fig.
23 CT1
CT4
J
d
ns
CT4
J
ns
IC = 15A, VCC = 400V VGE = 15V, RG = 22, L = 1.07mH Ls... |
| Description |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
275.00K /
12 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRGIB6B60KD
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| OCR Text |
... = 15V, RG = 100, L = 1.4mH Ls= 150nh, TJ = 25C IC = 5.0A, VCC = 400V VGE = 15V, RG = 100, L = 1.4mH Ls= 150nh, TJ = 25C
Ref.Fig.
23 CT1
CT4
J
d
ns
CT4
J
ns
IC = 5.0A, VCC = 400V VGE = 15V, RG = 100, L = 1.4mH ... |
| Description |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
270.40K /
12 Page |
View
it Online |
Download Datasheet |
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International Rectifier
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| Part No. |
IRGIB10B60KD1PBF
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| OCR Text |
... = 15V, RG = 50, L = 1.07mH Ls= 150nh, TJ = 25C IC = 10A, VCC = 400V VGE = 15V, RG = 50, L = 1.1mH Ls= 150nh, TJ = 25C
J
d
ns
J
ns
IC = 10A, VCC = 400V VGE = 15V, RG = 50, L = 1.07mH Ls= 150nh, TJ = 150C IC = 8.0A, VCC = 4... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
440.79K /
12 Page |
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it Online |
Download Datasheet |
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International Rectifier
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| Part No. |
IRGP4062DPBF IRGB4062DPBF
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| OCR Text |
...E = 15V RG = 10, L = 200H, LS = 150nh, TJ = 25C
Energy losses include tail & diode reverse recovery
CT4
IC = 24A, VCC = 400V, VGE = 15V RG = 10, L = 200H, LS = 150nh, TJ = 25C
CT4
IC = 24A, VCC = 400V, VGE=15V RG=10, L=100H, LS... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
951.36K /
12 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Semiconductor
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| Part No. |
CM1200E4C-34N
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| OCR Text |
...V RG(on) = 0.6, Tj = 125C, Ls = 150nh Inductive load VCC = 850V, IC = 1200A, VGE = 15V RG(off) = 3.3, Tj = 125C, Ls = 150nh Inductive load VCC = 850V, IC = 1200A, VGE = 15V RG(on) = 0.6, Tj = 125C, Ls = 150nh Inductive load IE = 1200A, VGE ... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
56.47K /
6 Page |
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International Rectifier
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| Part No. |
IRGB4060DPBF
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| OCR Text |
..., VGE = 15V RG = 47, L=1mH, LS= 150nh, TJ = 25C
Energy losses include tail and diode reverse recovery
CT4
IC = 8A, VCC = 400V RG = 47, L=1mH, LS= 150nh TJ = 25C IC = 8A, VCC = 400V, VGE = 15V RG = 47, L=1mH, LS= 150nh, TJ = 175C
Energ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
320.64K /
10 Page |
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it Online |
Download Datasheet |
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International Rectifier
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| Part No. |
IRGP4063DPBF
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| OCR Text |
...E = 15V RG = 10, L = 200H, LS = 150nh, TJ = 25C
Energy losses include tail & diode reverse recovery
CT4
IC = 48A, VCC = 400V, VGE = 15V RG = 10, L = 200H, LS = 150nh, TJ = 25C
CT4
IC = 48A, VCC = 400V, VGE=15V RG=10, L=200H, LS... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
776.17K /
10 Page |
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it Online |
Download Datasheet |
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