| |
|
 |
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| Part No. |
S1T8536X01-T0R0 S1T8536
|
| OCR Text |
...6
7
8
9
10
11
12
VREG VCOP VCON VCO
GND PLL
VCC PLL
VREG PLL
CP
LD
CLK DATA
LE
OSCO
2
2.4...5 6 7 8 9 10 11 12
24
GND BB QUAD OUT BUF IN BUF OUT DS INP DS INN
23
22
21
20
... |
| Description |
2.4GHZ-2.5GHZ SINGLE-CHIP RF TRANSCEIVER Data Sheet
|
| File Size |
312.82K /
24 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
UMS[United Monolithic Semiconductors]
|
| Part No. |
CHA2266-99F_00 CHA2266
|
| OCR Text |
12.5-17ghz Low-Noise Driver Amplifier
GaAs Monolithic Microwave IC Description
VD 1 The CHA2266 is a self biased, low-noise high gain driver amplifier. It is designed mainly for VSAT applications in Ku-band. The backside of the chip is bo... |
| Description |
12.5-17ghz Low-Noise Driver Amplifier
|
| File Size |
123.23K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
EUDYNA[Eudyna Devices Inc]
|
| Part No. |
FLL600IQ-2C
|
| OCR Text |
...voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 117 and -35.4 mA respectively with gate...5 47.0 11.0 Limits Typ. Max. 6 -0.3 48.0 12.0 9 51 0.8 -0.5 13 1.2 Unit A V V dBm dB A % C/W
Edit... |
| Description |
L-Band High Power GaAs FET
|
| File Size |
116.74K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
MAXIM[Maxim Integrated Products]
|
| Part No. |
MAX2016_06 MAX2016 MAX2016ETI MAX2016ETI_D MAX2016ETI_TD MAX2016ETI-T
|
| OCR Text |
...6 7 8 COR 9 VCC 10 SETD 11 OUTD 12 VCC 13 FV2 14 FV1 27 26 25 24 22 21 FB1 20 VCC 19 RFINB+ FB2 18 RFINB17 GND 16 COUTL 15 CSETL FA2
RF/I...5.25V Input Power Differential (RFIN_+, RFIN_-)......................+23dBm Input Power Single Ended... |
| Description |
LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements
|
| File Size |
931.31K /
20 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGF0921A
|
| OCR Text |
....89 101.36 86.68 70.74 55.29 43.12 (mag) 6.597 4.629 3.312 2.465 1.943 1.638 1.467 1.369 1.306 1.252 1.195 1.130 1.060 0.990 0.927 0.879 0.8...5
(1) Gate (2) Drain (3) Source
0.3
BACK SIDE PATTERN
(Unit:mm)
Fig.1 OUTLINE DRAWING
... |
| Description |
LnS Band GaAs FET
L & S BAND GaAs FET
|
| File Size |
427.43K /
24 Page |
View
it Online |
Download Datasheet |
| |
|
|
NEC, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| Part No. |
MGFS48B2122
|
| OCR Text |
....17 GHz A High power gain GLP = 12 dB (TYP.) @ f=2.17GHz A High power added efficiency
$33/,&$7,21
r
r
r
P.A.E. = 48 % (TYP...5$'(
IG
5(&200(1'('%,$6&21',7,216
VDS = 12 (V) ID = 2.0 (A) RG=20 (ohm) for each gate
$%62/8... |
| Description |
2.11 - 2.17 GHz BAND 60W GaAs FET 21日至二月17号GHz频段60瓦砷化镓场效应管
|
| File Size |
223.84K /
2 Page |
View
it Online |
Download Datasheet |
|
For
12.5-17ghz Found Datasheets File :: 68 Search Time::2.203ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | |
▲Up To
Search▲ |
|
Price and Availability
|
