12 25w pdf Datasheet P3 Full Text Search --- IC-ON-LINE


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12 25w Datasheet PDF File

For 12 25w Found Datasheets File :: 2494 Search Time::14.672ms
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				ONSEMI[ON Semiconductor]
Part No.	MAX828 MAX828SNTR ON0399 MAX829SNTR
OCR Text	... 24.5 -- 95 -- -- Typ 50 115 -- 12 35 96 99.9 25 -- 50 65 Max 90 260 5.5 15.6 45.5 % -- % W Unit A V+ FOSC V kHz PEFF VEFF ROUT...25w nominal at +25C and VIN = +5V. VOUT is approximately - 5V at light loads, and droops according t...
Description	From old datasheet system Switched Capacitor Voltage Converters
File Size	173.35K / 12 Page	View it Online	Download Datasheet

				MICREL[Micrel Semiconductor] Micrel Semiconductor, Inc.
Part No.	MIC5011 MIC5011BM MIC5011BN
OCR Text	...V, VS = 32V 7 24 11 11 10 27 12.5 13 25 4 15 16 50 10 V V s s VIN switched from 0 to 5V; measure time for VGATE to reach 20V VIN switched from 5 to 0V; measure time for VGATE to reach 1V Absolute Maximum Ratings indicate limits ...
Description	Minimum Parts High- or Low-Side MOSFET Driver Minimum Parts High- or Low-Side MOSFET Driver BUF OR INV BASED MOSFET DRIVER, PDSO8 Minimum Parts High- or Low-Side MOSFET Driver BUF OR INV BASED MOSFET DRIVER, PDIP8
File Size	120.68K / 12 Page	View it Online	Download Datasheet

				Micrel Semiconductor, Inc. MICREL[Micrel Semiconductor]
Part No.	MIC5013 MIC5013BM MIC5013BN
OCR Text	...V, VS = 32V 13 24 11 11 5 15 27 12.5 13 60 4 1.7 V+ = 7V, S4 closed VS = 4.9V, S4 open S4 closed VS = 11.8V, S4 open VS = 0V, S4 open VS = 25.5V, S4 open 75 70 150 140 360 350 1.6 I2 = 100 A V+ = 15V I2 = 200 A V+ = 32V I2 = 500 A Peak Curr...
Description	FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN BUF OR INV BASED MOSFET DRIVER, PDSO8 Protected High- or Low-Side MOSFET Driver
File Size	152.46K / 16 Page	View it Online	Download Datasheet

				Micrel Semiconductor, Inc. Micrel Semiconductor,Inc. MICREL[Micrel Semiconductor]
Part No.	MIC5800 MIC5800BM MIC5800BN MIC5801BN MIC5801BV MIC5801BWM 5962-8764001WA1
OCR Text	... VDD LATCHES 3 4 5 6 7 12 OUT1 11 OUT2 10 OUT3 9 OUT4 8 COM OE CLEAR STROBE IN1 IN2 1 2 3 4 5 6 7 8 9 24 VDD 23 NC 22 OUT1 21 OUT2 20 OUT3 19 OUT4 18 OUT5 17 OUT6 16 OUT7 15 OUT8 14 NC 13 COM MIC5800BN, BM IN3 IN4 IN5 CLEA...
Description	GT 25C 25#16 PIN RECP WALL RM 4/8-Bit并行输入锁存驱动 4/8-Bit Parallel-Input Latched Drivers
File Size	113.63K / 6 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2LC APT5010LLC
OCR Text	...T 5120 1030 190 145 26 73 11 12 30 6 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off D...25w, Peak I = 47A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	117.68K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2LL APT5010LLL
OCR Text	...6) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 050-7011 Rev- 1-2001 Gate Drain Source...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	55.78K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text	...UNIT pF 4105 824 47 92 22 40 12 9 5 30 nC Gate-Source Charge Turn-on Delay Time Rise Time Gate-Drain ("Miller ") Charge Turn-of...25w, Peak I = 46A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	54.02K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JFLL
OCR Text	...UNIT pF 4105 824 47 92 22 40 12 9 5 30 nC Gate-Source Charge Turn-on Delay Time Rise Time Gate-Drain ("Miller") Charge Turn-off...25w, Peak I = 44A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.49K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	... ID[Cont.]) Ohms A nA Volts 12-99 050-5937 Rev - Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Curre...25w, Peak I = 44A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JLL
OCR Text	...9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.1...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.35K / 2 Page	View it Online	Download Datasheet

For 12 25w Found Datasheets File :: 2494 Search Time::14.672ms
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