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Continental Device India Li...
CDIL[Continental Device India Limited]
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| Part No. |
TIP122F TIP127F
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| OCR Text |
...m Junction to Case (1) IC=1A, L=100mh,P.R.F.=10Hz, VCC=20V, RBE=100 ohms ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO (sus) * IC=100mA, IB=0 Collector Emitter (sus) Voltage ICBO VCB=100V, ... |
| Description |
NPN/PNP SILICON POWER DARLINGTON TRANSISTORS
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| File Size |
208.93K /
3 Page |
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SANYO
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| Part No. |
2SC5832
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| OCR Text |
...0 VCE=5V, IC=1A VCE=5V, IC=1A L=100mh, RBE=100 IC=1A, IB=4mA IC=1A, IB=4mA IC=100A, IE=0 IC=1mA, RBE= See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 55 55 25 1.0 65 65 0.2 3.5 0.5 1.5 2.0 75 75 1000 4000... |
| Description |
Darlington Transistors
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| File Size |
40.86K /
5 Page |
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it Online |
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SANYO
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| Part No. |
2SC4671
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| OCR Text |
...A IC=1A, IB=4mA IC=1A, IB=4mA L=100mh, RBE=100 25 50 50 60 60 70 70 1000 4000 1.0 1.5 2.0 V V mJ V V Conditions Ratings min typ max 10 2 Unit A mA
V(BR)CBO IC=100A, IE=0 V(BR)CEO IC=1mA, RBE=
Any and all SANYO products described or co... |
| Description |
NPN Epitaxial Planar Silicon Darlington Transistor Various Drivers Applications
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| File Size |
102.80K /
5 Page |
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it Online |
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ETC [ETC]
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| Part No. |
PA51A PA51
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| OCR Text |
...
4.3mH 5.0mH 6.2mH 15mH
20mH 100mh
SAFE OPERATING AREA (SOA)
The output stage of most power amplifiers has three distinct limitations: 1. The current handling capability of the transistor geometry and the wire bonds. 2. The second br... |
| Description |
From old datasheet system
POWER OPERATIONAL AMPLIFIERS
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| File Size |
67.27K /
4 Page |
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SEME-LAB[Seme LAB]
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| Part No. |
2N6800
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| OCR Text |
...ms, d 2% 2) @ VDD = 50V , L 0.100mh , RG = 25W , Peak IL = 1.5A , Starting TJ = 25C 3) @ ISD 1.5A , di/dt 50A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 7.5W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
23.75K /
2 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSI2N80A SSWI2N80A SSW_I2N80A SSW2N80A
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| OCR Text |
...imum Junction Temperature 2 O L=100mh, I AS=2A, VDD=50V, RG=27, Starting T J =25 C _ _ _ 3 O ISD < 2A, di/dt <90A/s, VDD <BVDSS , Starting T J =25 C _ 4 Pulse Test : Pulse Width = 250 s, Duty Cycle <2% O 5 O Essentially Independent of Opera... |
| Description |
Advanced Power MOSFET
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| File Size |
260.16K /
7 Page |
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APEX[Apex Microtechnology]
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| Part No. |
PA51 PA51A
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| OCR Text |
...H 6.2mH 50mH 15mH 400mH 20mH ** 100mh
GENERAL
Please read Application Note 1 "General Operating Considerations" which covers stability, supplies, heat sinking, mounting, current limit, SOA interpretation, and specification interpretatio... |
| Description |
POWER OPERATIONAL AMPLIFIERS
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| File Size |
182.52K /
4 Page |
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it Online |
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Price and Availability
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