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  100a 400v Datasheet PDF File

For 100a 400v Found Datasheets File :: 3253    Search Time::1.5ms    
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    SGB30N6009

Infineon Technologies AG
Part No. SGB30N6009
OCR Text ...10khz 100khz 0a 20a 40a 60a 80a 100a 120a 140a 160a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a 100a dc 1m...400v, v ge = 0/+15v, r g = 11 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t ...
Description Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

File Size 376.21K  /  11 Page

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    IPL60R360P6S

Infineon Technologies AG
Infineon Technologies A...
Part No. IPL60R360P6S
OCR Text ... =400v, i f =5.6a,d i f /d t =100a/s reverse recovery charge q rr - 3 - c v r =400v, i f =5.6a,d i f /d t =100a/s peak reverse recovery current i rrm - 18 - a v r =400v, i f =5.6a,d i f /d t =100a/s 7 600vcoolmos?p6powertr...
Description IGBT Modules
Very high commutation ruggedness

File Size 1,345.05K  /  14 Page

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    IXGK120N60C2 IXGX120N60C2

IXYS Corporation
Part No. IXGK120N60C2 IXGX120N60C2
OCR Text ... = 0V VCE = 0V, VGE = 20V IC = 100a, VGE = 15V, Note 1 TJ = 125C TJ = 125C Characteristic Values Min. Typ. Max. 600 3.0 5.5 V V 100 A 2 ...400v, RG = 1 IC = 100a, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 60A, VCE = 10...
Description HiPerFAST IGBT Lightspeed 2 Series

File Size 183.42K  /  6 Page

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    IKW50N60T Q67040S4718

Infineon Technologies AG
Part No. IKW50N60T Q67040S4718
OCR Text ...0N60T q t p=2s 140A 120A 100a IC, COLLECTOR CURRENT 100a 80A T C =80C T C =110C IC, COLLECTOR CURRENT 10s 10A 50...400v, VGE = 0/+15V, RG = 7) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, ...
Description Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

File Size 413.27K  /  13 Page

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    IPP50R500CE IPP50R500C-15

Infineon Technologies AG
Infineon Technologies A...
Part No. IPP50R500CE IPP50R500C-15
OCR Text ... =400v, i f =2.9a,d i f /d t =100a/s reverse recovery charge q rr - 1.2 - c v r =400v, i f =2.9a,d i f /d t =100a/s peak reverse recovery current i rrm - 12 - a v r =400v, i f =2.9a,d i f /d t =100a/s tab d r a i n p i n 2 g a t ...
Description LED Driver IC and Lighting IC
Metal Oxide Semiconductor Field Effect Transistor

File Size 1,486.28K  /  14 Page

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    TY Semicondutor
Part No. AOTF10N50FD
OCR Text ... recovery charge i f =10a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w turn-off fall time body diode reverse recovery time i f =1...400v i d =10a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance c...
Description Single N -Channel MOSFET

File Size 747.29K  /  6 Page

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    AOT29S50 AOTF29S50 AOB29S50

Alpha & Omega Semiconductors
Part No. AOT29S50 AOTF29S50 AOB29S50
OCR Text ...covery current i f =14.5a,di/dt=100a/ m s,v ds =400v v v gs =10v, i d =14.5a, t j =150c drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c m a v ds =0v, v gs =30v v ds =500v, v gs =0v v ds =5v,i d =250 m a v ds =400v, t j =150c ...
Description 500V 29A a MOS Power Transistor

File Size 321.77K  /  7 Page

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    APTGF50H60T1G

Microsemi Corporation
Part No. APTGF50H60T1G
OCR Text ...fe operating area t j = 125c 100a @ 500v * specification of igbt device but output current must be limited to 40a to not exceed a de...400v i c = 50a r g = 2.7 ? 12 ns t d(on) turn-on delay time 42 t r rise time 1...
Description Full - Bridge NPT IGBT Power Module

File Size 313.51K  /  6 Page

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    IGW40T120 Q67040-S4519 GW40T120

INFINEON[Infineon Technologies AG]
Part No. IGW40T120 Q67040-S4519 GW40T120
OCR Text ...T120 ^ TrenchStop Series 100a 100a TC=80C tp=3s 10s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A TC=110C 10A 50...400v 500V 600V 700V 800V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy...
Description From old datasheet system
Low Loss IGBT in Trench and Fieldstop technology
IGBTs & DuoPacks - 40A 1200V TO247 IGBT

File Size 407.11K  /  12 Page

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