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  100 110 120v Datasheet PDF File

For 100 110 120v Found Datasheets File :: 747    Search Time::1.406ms    
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    STB30NS15

STMICROELECTRONICS[STMicroelectronics]
Part No. STB30NS15
OCR Text ...5 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE ...110 0.73 2 250 -55 to 175 Unit V V V A A A W W/C V/ns mJ C *) Pulse width limited by safe operati...
Description N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET POWER MOSFET

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    SMP100MC SMP100MC-120 SMP100MC-140 SMP100MC-160 SMP100MC-200 SMP100MC-230 SMP100MC-270 -SMP100MC-200

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. SMP100MC SMP100MC-120 SMP100MC-140 SMP100MC-160 SMP100MC-200 SMP100MC-230 SMP100MC-270 -SMP100MC-200
OCR Text ...tive peak pulse current : IPP = 100 A (10/1000s) MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes an...110 120 130 Figure 6: Relative variation of breakover voltage versus junction temperature VBO[Tj...
Description TRISIL?/a> FOR TELECOM EQUIPMENT PROTECTION
TELECOM EQUIPMENT PROTECTION: TRISIL
TRISIL FOR TELECOM EQUIPMENT PROTECTION
TRISIL⑩ FOR TELECOM EQUIPMENT PROTECTION
TRISILFOR TELECOM EQUIPMENT PROTECTION ⑩的TRISIL用于电信设备保护

File Size 107.32K  /  10 Page

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    IRF5802 IRF5802TR

IRF[International Rectifier]
Part No. IRF5802 IRF5802TR
OCR Text ...VDS = 120v, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) t...110 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- 14 --- VGS = 0V, VDS = 120v, = 1.0MHz --- 3.0 --- VGS =...
Description 150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
Power MOSFET(Vdss=150V, Id=0.9A)
Power MOSFET(Vdss=150V/ Id=0.9A)
0.9 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET

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    IRF7451

IRF[International Rectifier]
Part No. IRF7451
OCR Text ...VDS = 120v, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) t...110 400 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = ...
Description Power MOSFET(Vdss=150V Rds(on)max=0.09ohm Id=3.6A)
Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A)

File Size 157.52K  /  8 Page

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    SMTHDT120 SMTHDT58 SMTHDT80 SMTHDTXX

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. SMTHDT120 SMTHDT58 SMTHDT80 SMTHDTXX
OCR Text ...etitive 67% VBR Value 75 150 30 100 5 - 40 to + 150 + 150 Unit A A A/s KV/s C C SMC FUNCTIONAL DIAGRAM. A K Storage and opera...110 LINE B 0 0 0 CA pF Max 80 70 70 CB pF Max 60 50 50 C pF Max 30 30 30 4/6 GND C S...
Description TRISILTM DISCRETE SOLUTION FOR ISDN PROTECTION

File Size 46.82K  /  6 Page

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    BYT261PIV-400 BYT260PIV-400 BYT60P-400

意法半导
STMICROELECTRONICS[STMicroelectronics]
http://
Part No. BYT261PIV-400 BYT260PIV-400 BYT60P-400
OCR Text ...50 150 C C A Value 400 1000 140 100 60 A Unit V A A TM: ISOTOP is a registered trademark of STMicroelectronics. May 2000 - Ed: 4D 1...110 100 90 80 70 60 50 40 30 20 10 0 = 0.2 = 0.1 =1 = 0.05 = 0.5 IM(A) 350 300 250 200 P=10...
Description    FAST RECOVERY RECTIFIER DIODES
Multiconductor Cable; Number of Conductors:7; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper; Voltage Nom.:300V RoHS Compliant: Yes

File Size 82.02K  /  7 Page

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    HA2-5160-2 HA2-5160-5 HA-5160 FN2911

INTERSIL[Intersil Corporation]
Part No. HA2-5160-2 HA2-5160-5 HA-5160 FN2911
OCR Text ...Full 25 75 60 74 10 - 150 100 80 100 - 75 60 74 10 - 150 100 80 100 - kV/V kV/V dB V/V MHz Common Mode Rejection Rat...110 100 90 80 70 60 50 40 30 20 10 0 -10 10 100 1K 10K 100K 1M 10M 180 100M PHASE 135 90 45 PHASE (D...
Description 100MHz/ JFET Input/ High Slew Rate/ Uncompensated/ Operational Amplifier
100MHz, JFET Input, High Slew Rate, Uncompensated, Operational Amplifier
From old datasheet system

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    IRF6215

IRF[International Rectifier]
Part No. IRF6215
OCR Text ...DS = -120v, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 66 ID = -6.6A 8.1 nC VDS = -120v 35 VGS = -10V, See Fig. 6 and 13 --- VDD = -75V --- ID = -6.6A ns --- RG = 6.8 --- RD = 12, See Fig. 10 D Between lead, 4.5 --- 6mm (0.25in.)...
Description HEXFET Power MOSFET
HEXFET?? Power MOSFET

File Size 121.52K  /  8 Page

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    IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR
OCR Text ...VDS = 480V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) t...110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F. ...
Description 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 1.2ohm,身份证\u003d 6.2A

File Size 110.34K  /  9 Page

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    HV9100 HV9100P HV9100PJ HV9102P HV9102PJ HV9103PJ HV9103 HV9102 HV9103P

Supertex Inc
SUTEX[Supertex, Inc]
Supertex Inc
Supertex, Inc.
Part No. HV9100 HV9100P HV9100PJ HV9102P HV9102PJ HV9103PJ HV9103 HV9102 HV9103P
OCR Text ...ature 3.92 3.86 15 4.00 4.00 30 100 0.25 4.08 4.14 45 250 V V K A mV/C VREF = -VIN RL = 10M IN = VIN, RL = 10M TA = -55C to 125C Oscillat...110 HV9103 49.0 99.0 49.4 99.4 100 0 175 49.6 99.6 nsec % nsec % Error Amplifier VFB IIN VOS AVO...
Description High-Voltage Switchmode Controllers with MOSFET
Ground Cords, Static Protection, Material Of Which Item Made Stainless Steel.

File Size 317.48K  /  7 Page

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