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  0.0029 Datasheet PDF File

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    1N3826A-1 1N3821 1N3821A 1N3821A-1 1N3822A 1N3828A-1 1N3822 1N3822A-1 1N3823 1N3823A 1N3823A-1 1N3824 1N3824A 1N3824A-1

Compensated Deuices Inc...
Microsemi, Corp.
Ironwood Electronics
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
Compensated Deuices Incorpo...
Part No. 1N3826A-1 1N3821 1N3821A 1N3821A-1 1N3822A 1N3828A-1 1N3822 1N3822A-1 1N3823 1N3823A 1N3823A-1 1N3824 1N3824A 1N3824A-1 1N3825 1N3825A 1N3826 1N3826A 1N3827 1N3827A 1N3827A-1 1N3828 1N3828A 1N3825A-1
OCR Text ... FIGURE 2 1000 800 600 400 200 0 0 25 50 75 100 125 150 175 Pd, Rated Power Dissipation (mW) TL , Lead temperature (C), 3/8" from body POWER DERATING CURVE 1000 ZZT, Zener Impedance (OHMS) 100 1N3822A 10 1N3829A ...
Description surface mount silicon Zener diodes 表面贴装硅稳压二极管
1 Watt Zener Diodes(1W齐纳二极 1瓦齐纳二极管1W的齐纳二极管
CABLE TIE LIGHT HEAVY BLK 14.6,1

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    1N3826AUR-1 1N3821AUR- CDLL3821A 1N3822AUR-1 CDLL3828A 1N3821AUR-1 1N3823AUR-1 1N3824AUR-1 1N3825AUR-1 1N3827AUR-1 1N382

Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
Part No. 1N3826AUR-1 1N3821AUR- CDLL3821A 1N3822AUR-1 CDLL3828A 1N3821AUR-1 1N3823AUR-1 1N3824AUR-1 1N3825AUR-1 1N3827AUR-1 1N3828AUR-1 CDLL3821 CDLL3822 CDLL3822A CDLL3823 CDLL3823A CDLL3824 CDLL3824A CDLL3825 CDLL3825A CDLL3826 CDLL3826A CDLL3827 CDLL3827A CDLL3828
OCR Text ... MILLIMETERS MIN MAX 2.39 2.66 0.41 0.55 4.80 5.20 4.11 REF. 0.03 MIN. INCHES MIN MAX .094 .105 .016 .022 .189 .205 .159 REF. .001 MIN. FIGURE 1 DESIGN DATA CASE: DO-213AB, Hermetically sealed glass case. (MELF, LL41) LEAD FINISH...
Description Zener Diode(Leadless Package for Surface Mount齐纳二极管(无铅封装用于表贴
2.048-V Precision Micropower Shunt Voltage Reference, 1% accuracy 3-SOT-23 -40 to 125

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    1N41501N457A 1N41501N45 1N457A

Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. 1N41501N457A 1N41501N45 1N457A
OCR Text ... -35 G lass P ack age Lead Dia. 0.018-0.022" 0.458-0.558 mm 1.0" 25.4 m m (M in.) Length 0.12 0-.200 " 3.05 -5 .08- mm D ia . 0.06 -0 .09" 1.53-2.28 mm Maximum Ratings Peak Inverse Voltage Average Rectified Current Continuo...
Description Silicon Switching Diode DO-35 Glass Package 硅开关二极管DO - 35玻璃封装

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    1N4150UR-1

MICROSEMI[Microsemi Corporation]
Part No. 1N4150UR-1
OCR Text ...C Forward Voltage Drop @ IF = 1.0 mA Forward Voltage Drop @ IF = 10 mA Forward Voltage Drop @ IF = 50 mA Forward Voltage Drop @ IF = 100 m Forward Voltage Drop @ IF = 200 mA Reverse Leakage Current @ VR = 50 V Breakdown Voltage @ Ir = 0.1 m...
Description MINI-MELF-SMD Silicon Diode

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    1N4150W-T1 1N4150W-T3 1N4151W-T3 1N4150W 1N4151W-T1

Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
Part No. 1N4150W-T1 1N4150W-T3 1N4151W-T3 1N4150W 1N4151W-T1
OCR Text ... SOD-123 Dim A Min 3.6 2.5 1.4 0.5 -- 0.4 0.95 -- Max 3.9 2.8 1.8 0.7 0.2 -- 1.35 0.12 Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion ! For General Purpose Switching Application C ! Plastic Material - ...
Description SURFACE MOUNT FAST SWITCHING DIODE

File Size 28.90K  /  2 Page

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    1N4150W 1N4151W

PanJit International Inc.
PANJIT[Pan Jit International Inc.]
Part No. 1N4150W 1N4151W
OCR Text ...-202, Method 208 Approx. Weight:0.01 gram SOD-123 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS PARAMETER Reverse Voltage Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current at Ta=25O...
Description SURFACE MOUNT SWITCHING DIODES

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    1N4150 1N4151

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. 1N4150 1N4151
OCR Text ... 25 C; note 1 - - - - -65 - 4 1 0.5 500 +200 200 A A A mW C C - - 600 450 mA mA see Fig.2; note 1 - - 300 200 mA mA CONDITIONS - - MIN. MAX. 75 50 V V UNIT 1999 Jun 01 2 Philips Semiconductors Product specification High-speed...
Description High-speed diodes 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35
High-speed diodes 0.3 A, 75 V, SILICON, SIGNAL DIODE, DO-35
High-speed diodes"

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    1N5711-1 JAN1N5711 JAN1N5711-1 JANS1N5711 JANS1N5711-1 JANTX1N5711 JANTX1N5711-1 JANTXV1N5711 JANTXV1N5711-1 1N5712-1 JA

CDI-DIODE[Compensated Deuices Incorporated]
Compensated Devices Incorporated
Part No. 1N5711-1 JAN1N5711 JAN1N5711-1 JANS1N5711 JANS1N5711-1 JANTX1N5711 JANTX1N5711-1 JANTXV1N5711 JANTXV1N5711-1 1N5712-1 JAN1N5712-1 JANS1N5712-1 JANTX1N5712-1 JANTXV1N5712-1 JANTX1N6857-1 JANS1N6857-1 JAN1N6857-1 1N6857-1 JANTXV1N6858-1 JANTX1N6858-1 1N6858-1 JAN1N6858-1 JANS1N6858-1 1N5711 DSB2810 DSB5712 JANTXV1N6857-1
OCR Text ...@ TL = +70C, L = 3/8" Derate to 0 (zero)mA@+150C ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified. CDI TYPE NUMBER MINIMUM BREAKDOWN VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM REVERSE LEAKAGE CURRENT V M...
Description Schottky Barrier Diodes(肖特基势垒二极管)

File Size 24.83K  /  2 Page

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    1N5711CSM

SemeLAB
SEME-LAB[Seme LAB]
TT electronics PLC
Part No. 1N5711CSM
OCR Text 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) 3 2 1 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) 0.76 0.15 (0.03 0.006) SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS A 1.4...
Description SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS SILICON, SIGNAL DIODE

File Size 12.60K  /  1 Page

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    1N5711WS 1N5711WS-7

DIODES[Diodes Incorporated]
Part No. 1N5711WS 1N5711WS-7
OCR Text ...ility Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: SA Weight: 0.004 grams (approx.) @ TA = 25C unless otherwise specified Symbol ...
Description 70V; 15mA surface mount schottky barrier diode. Ideally suited for automatic insertion

File Size 63.23K  /  3 Page

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