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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semiconductors
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| Part No. |
STP5NA80 STP5NA80FI STP5NA50
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| OCR Text |
...j a electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vcs = 0) gate-body leakage current (vos = 0) test conditions !d... |
| Description |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Trans MOSFET N-CH 500V 5A 3-Pin(3 Tab) TO-220
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| File Size |
1,014.80K /
3 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
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| Part No. |
BFX90 BFX91
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| OCR Text |
...< 25 c for bfx 90 for bfx 91 at tease < 25 c for bfx 90 for bfx 91 storage and junction temperature -180 -180 -6 -100 0.4 0.7 1.4 2.5 -55 to 200 v v v ma w w w w c mechanical data dimensions in mm collector connected to case collector conne... |
| Description |
SILICON PLANAR PNP
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| File Size |
79.66K /
2 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
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| Part No. |
BC140 BC141
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| OCR Text |
...mitter open base open collector tease < 45 ' c min. - - - - - - - -65 - -65 max. 80 100 40 60 7 1 1.5 200 3.7 +150 175 +150 unit v v v v v a a ma w "c c 'c thermal characteristics symbol rth j-a rthj-c parameter thermal resistance from junc... |
| Description |
NPN medium power transistors
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| File Size |
64.07K /
2 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
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| Part No. |
BUZ11
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| OCR Text |
... mj electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vds = 0) test conditions !d... |
| Description |
N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET MOSFET
N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET?MOSFET
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| File Size |
127.27K /
3 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
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| Part No. |
STW8NA80 STH8NA80FI
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| OCR Text |
... mj electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss idss igss parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vos = 0) test conditions ld... |
| Description |
N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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| File Size |
130.14K /
3 Page |
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it Online |
Download Datasheet |
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New Jersey Semi-Conductor Products, Inc.
|
| Part No. |
BFX85
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| OCR Text |
...en emitter open base tamb<;25*c tease 51 00 c lc=150ma;vce = 10v lc = 50 ma; vce = 10 v; f = 100 mhz icon = 150 ma; !bon = 15 ma; la* = -15 ma min. ? - - - - 70 50 - typ. - - - - - 142 - 360 max. 100 60 1 800 2.86 - - - unit v v a mw w mhz ... |
| Description |
NPN switching transistor
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| File Size |
84.74K /
2 Page |
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it Online |
Download Datasheet |
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New Jersey Semi-Conductor P...
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| Part No. |
MTP3N60FI
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| OCR Text |
...j a electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vds = 0) test conditions !d... |
| Description |
N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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| File Size |
141.51K /
3 Page |
View
it Online |
Download Datasheet |
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New Jersey Semi-Conductor P...
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| Part No. |
STP6NA80 STP6NA80FI
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| OCR Text |
...j a electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vos = 0) test conditions !d... |
| Description |
N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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| File Size |
148.98K /
3 Page |
View
it Online |
Download Datasheet |
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New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
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| Part No. |
STW7NA80 STH7NA80FI
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| OCR Text |
... mj electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vds = 0) test conditions ld... |
| Description |
N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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| File Size |
150.15K /
3 Page |
View
it Online |
Download Datasheet |
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