surviving pdf Datasheet P2 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 665403 C5150 25B11 WRA0515 SF18RG EUA6230 CY37256 X0402XX
	Product Description
	Full Text Search

surviving Datasheet PDF File

For surviving Found Datasheets File :: 143 Search Time::2.156ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Linear
Part No.	LTC4555
OCR Text	...rrent limited and is capable of surviving an indefinite short to GND. The VCC output should be bypassed with a 1F capacitor. The LTC4555 can use either a low ESR ceramic capacitor or a tantalum electrolytic capacitor on the VCC pin, with no...
Description	1.8V/3V SIM Power Supply and Level Translator
File Size	116.18K / 8 Page	View it Online	Download Datasheet

				ETC
Part No.	EFJ2803
OCR Text	...ll operating temperatures while surviving very high G forces. The 8-pin package is hermetically sealed and isolated from the internal circuits. Heat sinking is recommended for full power operation at elevated ambient temperatures. Multiple ...
Description	3A EMI FILTER
File Size	200.25K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHF7310SE
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech...
Description	TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=4.5ohm, Id=1.15A)
File Size	84.65K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHN93150 IRHN9150
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech...
Description	HEXFET? TRANSISTOR
File Size	113.19K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHM93160 IRHM9160
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HA...
Description	-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package HEXFET? TRANSISTOR
File Size	123.08K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	JANSR2N7389
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD H...
Description	TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
File Size	91.26K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRH7450 2035 IRH8450
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET...
Description	500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package 500V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package From old datasheet system HEXFET? TRANSISTOR
File Size	346.60K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHN7450 2115 IRHN8450 JANSF2N7270U JANSH2N7270U JANSR2N7270U
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET...
Description	HEXFET TRANSISTOR From old datasheet system RADIATION HARDENED POWER MOSFET 500V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 500V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
File Size	306.22K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHNA7260 IRHNA8260
OCR Text	...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET...
Description	TRANSISTOR N-CHANNEL
File Size	128.84K / 4 Page	View it Online	Download Datasheet

For surviving Found Datasheets File :: 143 Search Time::2.156ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |