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SIPEX[Sipex Corporation]
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| Part No. |
SP6136ER1 SP6136 SP6136EB SP613606
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| OCR Text |
...1 1 1 Manuf. Sipex Sipex Vishay Semi Vishay Semi Inter-Technical Vishay Semi TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK Panasonic Panasonic Not populated Panasonic Panasonic Panasonic Panasonic Panasonic Sullins Sullins Manuf. Part Number ... |
| Description |
Evaluation Board Manual
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| File Size |
413.47K /
9 Page |
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SIPEX[Sipex Corporation]
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| Part No. |
SP6133_06 SP6133 SP6133EB SP6133ER1 SP613306
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| OCR Text |
...1
Manuf.
Sipex Sipex Vishay Semi Vishay Semi Vishay Semi Inter-Technical TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK TDK Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Sullins Sullins
Manuf. Part Number
146-6587-0... |
| Description |
Evaluation Board Manual
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| File Size |
503.76K /
10 Page |
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it Online |
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Omron Electronics
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| Part No. |
G6CK-11XXX G6CK-21XXX
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| OCR Text |
... Low power consumption (200 mW) Semi-sealed and sealed types available Unique moving magnet armature (Moving Loop System) reduces relay size, magnetic interference, and contact bounce time Single and double-winding latching types available ... |
| Description |
(G6C Series) Power PCB Relay
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| File Size |
227.22K /
8 Page |
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it Online |
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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| OCR Text |
...grade n = n-type p = p-type s = semi-insulating t = high purity semi-insulating 4 = 4h 6 = 6h w= standard product
page 4 ? effective december 1998 ? revised march 2003 product descriptions 4h-silicon carbide 50.8mm diameter standard micro... |
| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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Honeywell
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| Part No. |
MS-7S
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| OCR Text |
...ewell-fci controls ? surface or semi-flush mounting ? shock and vibration resistant ? stations (ms-7lob) listed for outdoor applications ? c...double action station the ms-7sp is a double action station similar to the ms-7 station, with the ad... |
| Description |
Double action station
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| File Size |
408.89K /
2 Page |
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it Online |
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Price and Availability
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