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  rg-142 Datasheet PDF File

For rg-142 Found Datasheets File :: 761    Search Time::1.922ms    
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    APT8020JFLL APT6017JFLL

ADPOW[Advanced Power Technology]
Part No. APT8020JFLL APT6017JFLL
OCR Text ... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6W MIN TYP MAX UNIT pF 5320 1020 168 196 26 111 19 17 57 11 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.28K  /  2 Page

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    APT8020JLL

Advanced Power Technology
Part No. APT8020JLL
OCR Text ... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 33 142 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Re...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.75K  /  2 Page

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    SI7858DP

VISAY[Vishay Siliconix]
Part No. SI7858DP
OCR Text ...6V, RL = 6 ID 1A, VGEN = 4.5V, RG = 6 VDS = 6V, VGS = 4.5V, ID = 25A 42 6.7 9.2 41 58 66 118 39 40 6.7 9.2 40 40 140 70 50 ns nC Notes a. Pulse test; pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to prod...
Description N-Channel 12-V (D-S) MOSFET

File Size 201.34K  /  3 Page

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    IXTQ82N25P IXTK82N25P IXTT82N25P

IXYS[IXYS Corporation]
Part No. IXTQ82N25P IXTK82N25P IXTT82N25P
OCR Text ... 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Maximum Ratings 250 250 20 82 ...142 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 32 74 S pF pF pF ns ns ns ns nC nC nC 0.25 K/W TO-3P TO...
Description    PolarHT Power MOSFET
Discrete MOSFETs: Standard N-channel Types

File Size 606.20K  /  5 Page

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    MTP12P10 MTP12P10_D ON2547

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP12P10 MTP12P10_D ON2547
OCR Text ...(VDD = 25 V, ID = 0.5 Rated ID, RG = 50 ) See Figures 12 and 13 td(on) tr td(off) tf Qg Qgs Qgd -- -- -- -- 33 (Typ) 16 (Typ) 17 (Typ) 50 15...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ...
Description From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM

File Size 190.83K  /  6 Page

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    MTP23P06V ON2569

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTP23P06V ON2569
OCR Text ..., PEAK IL = 23 Apk, L = 3.0 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient G S CASE 221A-...142.2 100.5 41.7 0.804 3.5 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -- 13.8 98.3 41 62 38 7.0 18...
Description TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system

File Size 192.44K  /  8 Page

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    MTP55N06 MTP55N06Z MTP55N06Z_D ON2627 ON2626

Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP55N06 MTP55N06Z MTP55N06Z_D ON2627 ON2626
OCR Text ..., Peak IL = 55 Apk, L = 0.3 mH, RG = 25 ) Thermal Resistance -- Junction-to-Case Thermal Resistance -- Junction-to-Ambient Maximum Lead Temp...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ...
Description From old datasheet system
TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm

File Size 139.95K  /  6 Page

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    MTP8N06 MTP8N06E

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTP8N06 MTP8N06E
OCR Text ... Vdc, IL = 8.0 Apk, L = 3.0 mH, RG = 25 ) Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Solderi...142 2.0 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -- 8.0 31 21 25 13.9 2.6 6.6 6.1 20 60 40 50 20...
Description TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

File Size 212.56K  /  8 Page

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    MTP8N50E MTP8N50E_D ON2651 ON2650

Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP8N50E MTP8N50E_D ON2651 ON2650
OCR Text ..., PEAK IL = 8.0 Apk, L = 16 mH, RG = 25 W) Thermal Resistance - Junction-to-Case - Junction-to-Ambient Maximum Lead Temperature for Solderin...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ...
Description From old datasheet system
TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM

File Size 154.26K  /  6 Page

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    NTP125N02R NTB125N02R NTB125N02RT4

ONSEMI[ON Semiconductor]
Part No. NTP125N02R NTB125N02R NTB125N02RT4
OCR Text ...0 Vdc, IL = 15.5 Apk, L = 1 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds Symbol VDSS VGS RqJ...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ...
Description Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK
Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAK
Power MOSFET 125 A, 24 V N-Channel TO-220, D2PAK
Power MOSFET 125 A 24 V N-Channel TO-220 D2PAK

File Size 68.88K  /  6 Page

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For rg-142 Found Datasheets File :: 761    Search Time::1.922ms    
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