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NXP Semiconductors N.V.
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| Part No. |
BLF7G27LS-100 BLF7G27L-100
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| OCR Text |
...t v gs =11v; v ds = 0 v - - 500 na g fs forward transconductance v ds =10v; i d =153ma - 1.34 - s r ds(on) drain-source on-state resistance ...100_7g27ls-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v.... |
| Description |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
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| File Size |
144.04K /
14 Page |
View
it Online |
Download Datasheet
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NXP Semiconductors N.V.
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| Part No. |
BLF7G24LS-100 BLF7G24L-100
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| OCR Text |
...t v gs =11v; v ds = 0 v - - 500 na g fs forward transconductance v ds =10v; i d =5.35a - 10.5 - s r ds(on) drain-source on-state resistance ...100_7g24ls-100 all information provided in this document is subject to legal disclaimers. ? nxp b.v.... |
| Description |
Power LDMOS transistor
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| File Size |
117.71K /
14 Page |
View
it Online |
Download Datasheet
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Price and Availability
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