|
|
| |
|
 |
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| Part No. |
M24C16-BN6TP M24C16-BN6TG M24C16-BN6TG_W M24C16-BN6T_G M24C16-BN6TP_G M24C16-BN3TP_G M24C16-BN6TG_G M24C16-BN6T_W M24C16-BN6TP_W M24C16-BN3TP_W M24C08-WMN6T M24C02-WMN3T M24C02-WMN3TG_W M24C02-WMN3TP_G M24C02-WMN3TP_W M24C08 M24C16-MB3T M24C16-MB3T_G M24C16-MB3T_W M24C16-MB3TG M24C16-MB3TG_G M24C16-MB3TG_W M24C16-MB3TP M24C16-MB3TP_G M24C16-MB3TP_W M24C16-MB6T M24C16-MB6T_G M24C16-MB6T_W M24C16-MB6TG M24C16-MB6TG_G M24C16-MB6TG_W M24C16-MB6TP M24C16-MB6TP_G M24C16-MB6TP_W M24C16-MN3T M24C16-MN3T_G M24C16-MN3T_W M24C16-MN3TG M24C16-MN3TG_G M24C16-MN3TG_W M24C16-MN3TP M24C16-MN3TP_G M24C16-MN3TP_W M24C16-MN6T M24C16-MN6T_G M24C16-MN6T_W M24C16-MN6TG M24C16-MN6TG_G M24C16-MN6TG_W M24C16-MN6TP M24C16-MN6TP_G M24C16-MN6TP_W M24C04-RMN3T M24C04-RMN3T_G M24C04-RMN3T_W M24C04-RMN3TG M24C04-RMN3TG_G M24C04-RMN3TG_W M24C04-RMN3TP M24C04-RMN3TP_G M24C04-RMN3TP_W M24C04-RMN6T M24C04-RMN6T_G M24C04-RMN6T_W M24C04-RMN6TG M24C04-RMN6TG_G M24C04-RMN6TG_W M24C04-RMN6TP M24C04-RMN6TP_G M24C04-RMN6TP_W M24C16-WMN6T M24C16-RMN6T M24C04-MN6T M24C04-MN6T_G M24C04-MN6T_W M24C04-MN6TG M24C04-MN6TG_G M24C04-MN6TG_W M24C04-MN6TP M24C04-MN6TP_G M24C04-MN6TP_W M24C16-WMN6T_G M24C16-WMN6T_W M24C16-WMN6TG M24C1
|
| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C BuS EEPROM
45 V, 100 mA NPN general-purpoSe tranSiStorS
General purpoSe PIN diode
12-Bit, 2.5 uS Dual DAC, Serial Input, Pgrmable Settling Time, SimultaneouS Update, Low Power 8-CDIP -55 to 125
8-Bit ConStant-Current LED Sink Driver 16-TSSOP -40 to 125
Removal Tool, Han D; RoHS Compliant:N/A RoHS Compliant: YeS
CRIMP SET 0.14 - 0.50MM ;
NPN 1 GHz wideband tranSiStor - @ f: 500 MHz; @ f1: 500 ; f<Sub>TSub>: 1 GHz; Frequency: 4.5 MHz; I<Sub>CSub>: 25 mA; NoiSe figure: 4.5@f1 dB; P<Sub>totSub>: 300 mW; Polarity: NPN ; VCEO max: 15 V
16-Channel LED Driver 100-HTQFP -20 to 85
8-Bit ConStant-Current LED Sink Driver 16-SOIC -40 to 125
8-Bit, 10 uS Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 14-SOIC -40 to 85
MicroproceSSor CryStal; Frequency:20MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; CryStal TerminalS:Radial Leaded; ESR:40ohm; Leaded ProceSS Compatible:YeS; Mounting Type:Through Hole; OScillator Type:TCXO RoHS Compliant: YeS
8-Bit, 10 uS Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 14-PDIP -40 to 85
ER 4C 4#4 PIN RECP WALL
8-Bit, 10 uS Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 16-SOIC 0 to 70
Power LDMOS tranSiStor
Three quadrant triacS guaranteed commutation - I<Sub>GTSub>: 25 mA; I<Sub>TSub> (R<Sub>MSSub>): 16 A; V<Sub>DRMSub>: 600 V
18-Bit RegiStered TranSceiver With 3-State OutputS 56-SSOP -40 to 85
45 V, 500 mA PNP general purpoSe tranSiStorS - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; I<Sub>CSub> max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 4C 4#4 SKT RECP WALL
Replaced by TLV5734 : 8-Bit, 20 MSPS ADC Triple Ch., Digital Clamp for YUV/NTSC/PAL, Output Data Format Mux, Low Power 64-LQFP -20 to 75
8-Bit, 10 uS Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 16-SOIC -40 to 85
NPN 1 GHz wideband tranSiStor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; NoiSe figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V
Dual N-channel dual gate MOSFET - ID: 30 mA; IDSS: 100 (max) mA; VDSmax: 6 V
ER 23C 16 12 8 4 PIN RECP WALL
D87 - CONNECTOR ACCESSORY
ER 5C 3#12 2#0 SKT RECP WALL
Silicon planar diode - Cd max.: 1.0@VR=20V pF; IF max: 100 mA; RD @ IF=5 mA AND F=200 MHz max: 0.7 Ohm; RS max: 0.7 ; VR max: 35 V
Triple high-Speed Switching diodeS - Cd max.: 1.5 pF; Configuration: triple iSolated ; IF max: 200 mA; IFSM max: 4.5 A; IR max: 1000@VR=75V nA; IFRM: 450 mA; trr max: 4 nS; VFmax: 1@IF=50mA mV; VR max: 100 V
NPN 5 GHz wideband tranSiStor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; NoiSe figure: 3@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; SyStem frequency: 9
P-channel enhancement mode vertical D-MOS tranSiStor - Configuration: Single P-channel ; ID DC: 0.2 A; RDS(on): 12000@10V mOhm; VDSmax: 240 V
Removal Tool Han E CrimpcontactS in E Mo; RoHS Compliant:N/A
PNP 5 GHz wideband tranSiStor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 70 mA; fT: 5 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 100 mA; Ptot: 1000 mW; Polarity: PNP ; VCE: 10 V; V<Sub
Three quadrant triacS guaranteed commutation - IGT: 25 mA; IT (RMS): 16 A; VDRM: 600 V
PowerMOS tranSiStor Logic level TOPFET - @ VIS: 5 V; ID: 0.7 A; Number of pinS: 3 ; RDS(on): 0.2 mOhm; VDSmax: 50 V
Silicon RF SwitcheS - [S21(Off)]2 min: 30 ; [S21(On)]2 max: 3 ; ID: 10 mA; IGSS max: 100 nA; Mode: depl. ; RDS(on): 20 Ohm; S21(off): 30 dB; S21(on): 3 dB; VDSmax: 3 V; VSG max: 7 V
Schottky barrier double diodeS - Cd max.: 60@VR=4V pF; Configuration: dual SerieS ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-Speed double diode - Cd max.: 2.5 pF; Configuration: dual iSolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 nS; VFmax: 1@IF=200mA mV; VR max: 60 V
Schottky barrier double diodeS - Cd max.: 60@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-Speed diode - Cd max.: 1 pF; Configuration: Single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 nS; VFmax: 1@IF=50mA mV; VR max: 75 V
NPN general purpoSe double tranSiStor - DeScription: Current Mirror
ER 30C 24#16 6#12 SKT RECP WAL
45 V, 500 mA PNP general purpoSe tranSiStorS - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 35C 28#16 7#12 SKT RECP WAL
ER 35C 28#16 7#12 PIN RECP WAL
Dual high-voltage Switching diodeS
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
PowerMOS tranSiStor TOPFET high Side Switch 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
CONNECTOR ACCESSORY 连接器附
8-Bit, 10 uS Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, SimultaneouS Update, Low Power 14-SOIC 0 to 70 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
Replaced by TLC5733A : 20 MSPS 3-Ch. ADC with Clamp 64-LQFP -20 to 75 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
TOPFET high Side Switch SMD verSion 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Silicon Bi-directional Trigger Device 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
For USe With:Harting Han D ContactS; Crimp Tool:Service Crimping Tool with Locator; Wire Size (AWG):26-16; Leaded ProceSS Compatible:YeS 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 iS a 2-kb Serial CMOS EEPROM internally organized aS 256 wordS of 8 bitS each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
|
| File Size |
173.56K /
29 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| Part No. |
93C56 M9306-RDW3T M9306-RDS3T M9306-RDS6T M9306-RDW6T M9306-DW6T M9306-DW3T M9306-DS6T M9306-DS3T M93C06 M93C46 M93C86 M93C66 M9346-TDS6T M9346-TDW6T M9346-TDS3T M9346-TDW3T M9306-WBN6T M9306-WDS6T M9306-WDS3T M9306-WDW6T M9306-WBN3T M9306-WMN3T M9306-WMN6T M9306-WDW3T M93C06BN M93C06DS M93C06DW M93C46BN M93C46DS M93C46DW M93C46MN M93C56BN M93C46-R M93C46-W M93C56-W M9306-BN3T M9306-BN6T M9306-MN3T M9306-MN6T M93C46-RDW M93C46-MN M93C46-MB M93C46-RBN M93C46-RMB M93C46-RMN M9366-TRMN3T M93C66-RBN M9366-TRDW3T M93C66-DW M9366-TWBN6T M9366-TWDS3T M93C66-RDS M9366-TRMN6T M9366-TWBN3T M93C46-RDS M9366-TRBN3T M9366-TRBN6T M9366-TRDS6T M9366-TWDW3T M9366-TWDW6T M9366-TWMN3T M93C66-RDW M9366-TBN3T M9376-WDW3T M9376-WDW6T M9366-TRDW6T M9366-TWDS6T M9366-TBN6T M93C76-WBN M9376-WMN6T M9376-WBN6T M9376-WMN3T M9376-WDS6T M93C66-BN M9366-TRDS3T M9366-TWMN6T M93C76-WMN M9376-WDS3T M9376-WBN3T M9306-RMN3T M9306-RMN6T M9306-TRBN3T M9306-TRBN6T M9306-TRDS3T M9306-TRDS6T M9306-TRMN3T M9306-TWBN6T M9306-TWDS3T M9306-TWDS6T M9306-TWMN3T M9306-TWMN6T M9306-TRDW6T M9306-TWDW3T M9306-TRDW3T M9306-TWDW6T M9306-TWBN3T M9306-TRMN6T M9366-TMN6T M9366-TMN3T M9306-TDW6T M9306-TDS6T M9306-TDW3T M9306-TDS3T M9356
|
| Description |
16Kbit / 8Kbit / 4Kbit / 2Kbit / 1Kbit and 256bit 8-bit or 16-bit wide
Round Conductor Flat Cable, 3749/100 30 AWG, .025 (0.64)
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 16KbitKbitKbitKbitKbit56 8位或16位全
CONNECTOR ACCESSORY 连接器附
HOT MELT ADHESIVE VO-Q 5/8X8" 16KbitKbitKbitKbitKbit位或16位宽）MICROWIRE串行EEPROM的访
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial AcceSS EEPROM 16KbitKbitKbitKbitKbit位或16位宽）MICROWIRE串行EEPROM的访
HOT MELT ADHESIVE Q 5/8X8" 16KbitKbitKbitKbitKbit位或16位宽）MICROWIRE串行EEPROM的访
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 16KbitKbit4KbitKbit1Kbit56 8位或16位全
TRANS PREBIASED NPN 200MW SOT323 16KbitKbitKbitKbitKbit56 8位或16位全
64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
128 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial AcceSS EEPROM with Block Protection
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit (8-bit or 16-bit wide) MICROWIRE Serial AcceSS EEPROM
|
| File Size |
260.42K /
31 Page |
View
it Online |
Download Datasheet |
|
Bom2Buy.com
Price and Availability
|
