K4S643232E-TI60 pdf Datasheet P2 Part Num --- IC-ON-LINE


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K4S643232E-TI60 Datasheet PDF File

For K4S643232E-TI60 Found Datasheets File :: 22+ Page :: | 1 | <2> | 3 |


Part No.	STI50-561K STI60-500K STI60-5R6K STI60-2R0K STI60-151K STI40-4R7K STI70-180K STI70-751K STI70-331K
Description	1 ELEMENT, 50 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 5.6 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 2 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 150 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 4.7 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 18 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 750 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 330 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
File Size	79.36K / 2 Page	View it Online	Download Datasheet

HUA FENG CIRCUIT

					Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V CONNECTOR ACCESSORY 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
File Size	98.11K / 12 Page	View it Online	Download Datasheet

					Voltage Multipliers, Inc.
Part No.	LTI610UF LTI606UF LTI602UF
Description	200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time
File Size	215.78K / 2 Page	View it Online	Download Datasheet

					IXYS Corporation
Part No.	SS150TI60110
Description	Silicon Carbide Schottky Diode
File Size	544.24K / 3 Page	View it Online	Download Datasheet

					Voltage Multipliers
Part No.	LTI602 LTI602UF LTI606 LTI606F LTI606UF LTI610 LTI610UF
Description	200 V three phase bridge 30-40 A forward current, 3000 ns recovery time 200 V three phase bridge 30-40 A forward current, 70 ns recovery time 600 V three phase bridge 30-40 A forward current, 3000 ns recovery time 600 V three phase bridge 30-40 A forward current, 150 ns recovery time 600 V three phase bridge 30-40 A forward current, 70 ns recovery time 1000 V three phase bridge 30-40 A forward current, 3000 ns recovery time 1000 V three phase bridge 30-40 A forward current, 70 ns recovery time
File Size	215.24K / 2 Page	View it Online	Download Datasheet

					Voltage Multipliers, Inc.
Part No.	LTI602UFT LTI606UFT LTI602FT
Description	200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time 3 PHASE, 40 A, SILICON, BRIDGE RECTIFIER DIODE
File Size	221.24K / 2 Page	View it Online	Download Datasheet

					Voltage Multipliers Inc.
Part No.	LTI602 LTI602F LTI602UF LTI606 LTI606F LTI606UF LTI610 LTI610F LTI610UF
Description	200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time
File Size	212.32K / 2 Page	View it Online	Download Datasheet

					SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4E660412E-JI45 K4E640412E-JP45 K4E660412E-JI60 K4E640412E-JP50 K4E640412E-JI45 K4E640412E-JI60 K4E640412E-JI50 K4E640412E-JP60 K4E660412E-JI50 K4E660412E-JP50 K4E660412E-JP45 K4E660412E-TI60 K4E640412E-TI45 K4E660412E-TI45 K4E640412E-TI60 K4E640412E-TI50 K4E660412E-JP60 K4E660412E-TI50 K4E640412E-TP50 K4E640412E-TP60 K4E660412E-TP45 K4E660412E-TP50 K4E640412E-TP45
Description	Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 33uF; Voltage: 100V; Case Size: 10x25 mm; Packaging: Bulk CONNECTOR ACCESSORY 16M x 4bit CMOS Dynamic RAM with Extended Data Out 16米x 4位的CMOS动态随机存储器的扩展数据输
File Size	196.05K / 21 Page	View it Online	Download Datasheet

					SAMSUNG[Samsung semiconductor]
Part No.	K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4E640412E-TP45 K4E640412E-TP50 K4E640412E-TP60 K4E660412E-TP60 K4E640412E K4E640412E-JI45 K4E640412E-JI50 K4E640412E-JI60 K4E640412E-JP45 K4E640412E-JP50 K4E640412E-JP60 K4E660412E K4E660412E-JI45 K4E660412E-JI50 K4E660412E-JI60 K4E660412E-JP45 K4E660412E-JP50 K4E660412E-JP60 K4E660412E-TI45 K4E660412E-TI50 K4E660412E-TI60 K4E660412E-TP45 K4E660412E-TP50
Description	16M x 4bit CMOS Dynamic RAM with Extended Data Out
File Size	191.44K / 21 Page	View it Online	Download Datasheet

					Voltage Multipliers
Part No.	LTI602FT LTI602T LTI602UFT LTI606FT LTI606T LTI610FT LTI610T LTI610UFT
Description	200 V three phase bridge 30-40 A forward current, 150 ns recovery time 200 V three phase bridge 30-40 A forward current, 3000 ns recovery time 200 V three phase bridge 30-40 A forward current, 70 ns recovery time 600 V three phase bridge 30-40 A forward current, 150 ns recovery time 600 V three phase bridge 30-40 A forward current, 3000 ns recovery time 1000 V three phase bridge 30-40 A forward current, 150 ns recovery time 1000 V three phase bridge 30-40 A forward current, 3000 ns recovery time 1000 V three phase bridge 30-40 A forward current, 70 ns recovery time
File Size	220.70K / 2 Page	View it Online	Download Datasheet

For K4S643232E-TI60 Found Datasheets File :: 22+ Page :: | 1 | <2> | 3 |

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