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irl530n Datasheet PDF File

For irl530n Found Datasheets File :: 18 Search Time::1.297ms
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					IRF[International Rectifier]
Part No.	IRLR3410 IRLU3410 U3410 IRLR_U3410 IRLR/U3410
OCR Text	...dth 300s; duty cycle 2% Uses irl530n data and test conditions ISD 9.0A, di/dt 540A/s, VDD V(BR)DSS, This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact ** When mounted on 1" square PCB (FR-4...
Description	HEXFET? Power MOSFET 100V Single N-channel HexFET Power MOSFET in a D-pak Package
File Size	154.72K / 10 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	AUIRLR3410
OCR Text	...th 300s; duty cycle 2%. Uses irl530n data and test conditions. This is applied for LS of D-PAK is measured between When mounted on 1" square PCB (FR-4 or G-10 lead and center of die contact Material ). For recommended footprint and...
Description	HEXFET Power MOSFET
File Size	245.92K / 12 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	94-4591 IRLR3410TR IRLR3410TRL IRLU3410 IRLU3410PBF
OCR Text	...dth 300s; duty cycle 2% Uses irl530n data and test conditions ISD 9.0A, di/dt 540A/s, VDD V(BR)DSS, This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact ** When mounted on 1" square PCB (FR-4...
Description	100V Single N-Channel HEXFET Power MOSFET in a D-Pak package 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
File Size	166.28K / 10 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRLR3410PBF IRLU3410PBF
OCR Text	...center of die contact uses irl530n data and test conditions pulse width 300s; duty cycle 2% irlr/u3410pbf www.irf.com 3 fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. t...
Description	HEXFET? Power MOSFET
File Size	285.32K / 11 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRLU3410PBF
OCR Text	...center of die contact uses irl530n data and test conditions pulse width 300s; duty cycle 2% irlr/u3410pbf www.irf.com 3 fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. ...
Description	Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status: Remarks:
File Size	283.97K / 11 Page	View it Online	Download Datasheet

					International Rectifier, Corp.
Part No.	irl530nL
OCR Text	...300s; duty cycle 2%. ? uses irl530n data and test conditions ** when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended soldering techniques refer to application note #an-994. source-drain ratings and characteristic...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 17A I(D) \| TO-262AA 晶体管\| MOSFET的\| N沟道\| 100V的五（巴西）直\| 17A条（丁）\|62AA
File Size	241.88K / 10 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRLI530N
OCR Text	...)dss , t j 175c ? uses irl530n data and test conditions ? pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm...
Description	100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
File Size	149.89K / 8 Page	View it Online	Download Datasheet

					International Rectifier, Corp.
Part No.	IRLI530NPBF
OCR Text	... # % uses irl530n data and test conditions ' (* )5 ci) 66( l 1 " "" >91/36( <b)6! )= 5* .5 ...
Description	HEXFET Power MOSFET HEXFET功率MOSFET
File Size	223.89K / 8 Page	View it Online	Download Datasheet

For irl530n Found Datasheets File :: 18 Search Time::1.297ms
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