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  id-6.8a Datasheet PDF File

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...S 500V RDS(on) max 0.85 ID 8.0A Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and D...6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 31,See Fig. 10 --- VGS = 0V --- VDS...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...S 500V Rds(on) max 0.85 ID 8.0A TO-220AB G DS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC...6-32 or M3 screw Max. 8.0 5.1 32 125 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ...S = 500V G S RDS(on) = 0.85 ID = 8.0A Description This new series of low charge HEXFET(R) power MOSFETs achieve significant lower ga...6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 30, See Fig. 10 Between lead, nH 7....
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

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    IRF9130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9130SMD
OCR Text ...T FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 1 3 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 -100V -8A W 0.35W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 ...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ... = -100V RDS(on) = 0.48 G ID = -6.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ... = -100V G S RDS(on) = 0.48 ID = -6.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

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    IRF9530S IRF9530SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9530S IRF9530SMD
OCR Text ...T FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES ! 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) -100V -8A W 0.35W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 7 (0 .3 8 1 ) 9 .3 8 (0 .3 6 9 ) 1 1 .5 8 (0 .4 5 6 ) 1 1 .2 8 (0 .4 ...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...rent TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 44 2.0 3.5 2.8 16 1.7 N-Channel Maximum P-Channel 30 20 -2.3...6.9 14 6.1 12 1.0 2.0 1.7 3.4 1.8 3.5 1.1 2.2 6.2 12 9.7 19 8.8 18 14 28 13 26 20 40 3.0 6.0 6.9 14 ...
Description Power MOSFET(Vdss= -30V)

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...rrent TA = 25C TA = 70C VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Maximum 30 20 3.5 2.8 16 1.7 2.0 1.3 44 2.0 0.20 5.0 -55 to + 1...6.9 1.0 1.8 6.2 8.8 13 3.0 190 120 61 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Ref...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

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    P6KE200 P6KE47 P6KE51 P6KE300 P6KE56 P6KE33 P6KE75 P6KE8.2 P6KE22 P6KE220 P6KE12 P6KE120 P6KE110 P6KE10 P6KE100 P6KE15 P

GE Security, Inc.
GE[General Semiconductor]
Panjit International Inc
Shanghai Sunrise Electronics
Part No. P6KE200 P6KE47 P6KE51 P6KE300 P6KE56 P6KE33 P6KE75 P6KE8.2 P6KE22 P6KE220 P6KE12 P6KE120 P6KE110 P6KE10 P6KE100 P6KE15 P6KE150 P6KE130 P6KE43 P6KE62 P6KE91 P6KE400 P6KE6.8 P6KE160 P6KE440 P6KE170 P6KE36 P6KE39 P6KE300A P6KE100A P6KE7.5A P6KE7.5 P6KE20 P6KE33A P6KE82 P6KE440A P6KE10A P6KE11 P6KE110A P6KE11A P6KE120A P6KE12A P6KE13 P6KE130A P6KE13A P6KE150A P6KE15A P6KE16 P6KE160A P6KE16A P6KE170A P6KE18 P6KE180 P6KE180A P6KE18A P6KE200A P6KE20A P6KE220A P6KE22A P6KE24 P6KE24A P6KE250 P6KE250A P6KE27 P6KE27A P6KE30 P6KE30A P6KE350 P6KE350A P6KE36A P6KE39A P6KE400A P6KE43A P6KE47A P6KE51A P6KE56A P6KE6.8A P6KE62A P6KE68 P6KE68A P6KE75A P6KE8.2A P6KE82A P6KE9.1 P6KE9.1A P6KE91A
OCR Text ...r bi-directional types Typical ID less than 1A above 10V High temperature soldering guaranteed: 265C/10 seconds, 0.375" (9.5mm) lead lengt...6 x 1.6" (40 x 40mm) per Fig. 5 (3) Measured on 8.3ms single half sine-wave or equivalent square wav...
Description TransZorb Transient Voltage Suppressor(TransZorb瞬变电压抑制 TransZorb瞬态电压抑制器(TransZorb瞬变电压抑制器)
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR TRANSZORB瞬态电压抑制器
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 600Watt Peak Power 5.0 Watt Steady State)
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W

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