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  gma Datasheet PDF File

For gma Found Datasheets File :: 438    Search Time::1.594ms    
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    BFP196 Q62702-F1320

SIEMENS[Siemens Semiconductor Group]
Part No. BFP196 Q62702-F1320
OCR Text ... f = 1.8 GHz Power gain 2) gma IC = 50 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 12.5 6.5 16 10 - IC = 50 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) gma = |S21/S12| (k-(k2-1...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

File Size 61.07K  /  7 Page

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    BFR181W Q62702-F1491

SIEMENS[Siemens Semiconductor Group]
Part No. BFR181W Q62702-F1491
OCR Text ..., ZL = ZLopt Power gain 2) gma |S21e|2 15 9.5 13 - IC = 5 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 5 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) gma = |S21/S12| (k-(k2...
Description NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
From old datasheet system

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    BFR181 Q62702-F1314

SIEMENS[Siemens Semiconductor Group]
Part No. BFR181 Q62702-F1314
OCR Text ..., ZL = ZLopt Power gain 2) gma |S21e|2 14 9 11.5 - IC = 5 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 5 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) gma = |S21/S12| (k-(k2...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

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    BFS480 Q62702-F1531

SIEMENS[Siemens Semiconductor Group]
Part No. BFS480 Q62702-F1531
OCR Text ...VR mA IC 12 Power Gain gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 22 Power Gain gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB dB G 18 8V 2V G 13 12 11 8V 3V 2V 16 1V 14 0.7V 12 10 9 8 7 0.7V 1V ...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
From old datasheet system

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    BFP193W Q62702-F1577

SIEMENS[Siemens Semiconductor Group]
Part No. BFP193W Q62702-F1577
OCR Text ... f = 1.8 GHz Power gain 2) gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 15 9 19.5 13 - IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) gma = |S21/S12| (k-(k2-1)1...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 60.05K  /  7 Page

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    BFP193 Q62702-F1282 BFP193Q62702-F1282

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text ... f = 1.8 GHz Power gain 2) gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 14.5 8.5 17.5 11.5 - IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) gma = |S21/S12| (k-(...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

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    INFINEON[Infineon Technologies AG]
Part No. Q62702-G0091
OCR Text ... Gms 25 dB 2 GHz 20 gma 30 Gms 2 S21 25 20 IS21I2 15 10 gma gma Gms 3 GHz 15 4 GHz 5 GHz 10 6 GHz 5 5 0 0.1 0 1 10 0 2 4 6 8 10 12 14 GHz f Icc mA S21 versus Frequency and T...
Description Self-Biased BFP405

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    Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. Q62702-F1611 BFP81
OCR Text ... f = 1.8 GHz Power gain 2) gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 15.5 9.5 21 13.5 - IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) gma = |S21/S12| (k-(k2...
Description NPN Silicon RF Transistor for low noi...
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%

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    Q62702-F1359 BFG19S BFG19

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1359 BFG19S BFG19
OCR Text ... f = 1.8 GHz Power gain 2) gma IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 11 5 dBm 35 13.5 8 - IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz Third order intercept p...
Description NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna)
From old datasheet system
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)

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    Q62702-F1382 BFP183

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
Part No. Q62702-F1382 BFP183
OCR Text ..., ZL = ZLopt Power gain 2) gma |S21e|2 16.5 11 14 - IC = 15 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) gma = |S21/S12| (k-...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管(对于低噪声,高增益2毫安0毫安的集电极电流宽带放大器)
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

File Size 60.49K  /  7 Page

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For gma Found Datasheets File :: 438    Search Time::1.594ms    
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