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  fet2-16 Datasheet PDF File

For fet2-16 Found Datasheets File :: 137    Search Time::1.5ms    
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    AO4930

Alpha & Omega Semiconductors
Part No. AO4930
OCR Text ...A RDS(ON) < 13.5m RDS(ON) < 16m FET2 V DS(V) = 30V I D=9A (V GS = 10V) <15.8m (V GS = 10V) <23m (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Cr...16 38 2 1.3 -55 to 150 Units V V A TA=25C TA=70C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25C 9.5 ...
Description Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 171.31K  /  8 Page

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    AO4926

Alpha & Omega Semiconductors
Part No. AO4926
OCR Text FET2 VDS (V) = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5m <24m (VGS = 10V) <29m (VGS = 4.5V) RDS(ON) < 16m UIS TESTED! R...16.0 1.8 Min 30 0.02 10 0.1 20 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF DYNAMIC PARAM...
Description Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 237.17K  /  8 Page

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    AO4928

Alpha & Omega Semiconductors
Part No. AO4928
OCR Text ...A RDS(ON) < 16m RDS(ON) < 19.5m FET2 V DS(V) = 30V I D=7.3A (V GS = 10V) <24m (V GS = 10V) <29m (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Cr...16 38 2.0 1.3 -55 to 150 A mJ W C Repetitive avalanche energy L=0.3mH Power Dissipation TA=70C...
Description Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 152.59K  /  8 Page

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    BUK9MGP-55PTS

NXP Semiconductors N.V.
Part No. BUK9MGP-55PTS
OCR Text ...voltage Static characteristics, FET2 RDSon drain-source on-state resistance ratio of drain current to sense current - 21.3 25 m ...16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S2 S2 D2 D1 KS1 S1 ...
Description Dual TrenchPLUS logic level FET

File Size 344.95K  /  20 Page

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    BUK9MJJ-55PTT

NXP Semiconductors N.V.
Part No. BUK9MJJ-55PTT
OCR Text ...tatic characteristics, FET1 and FET2 ID/Isense 5850 55 6500 - 7150 - A/A V V(BR)DSS drain-source breakdown voltage NXP ...16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S2 S2 D2 D1 KS1 S1 ...
Description Dual TrenchPLUS logic level FET

File Size 253.22K  /  15 Page

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    BUK9MLL-55PLL

NXP Semiconductors N.V.
Part No. BUK9MLL-55PLL
OCR Text ...tatic characteristics, FET1 and FET2 ID/Isense 2430 55 2700 - 2970 - A/A V V(BR)DSS drain-source breakdown voltage NXP ...16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S2 S2 D2 D1 KS1 S1 ...
Description Dual TrenchPLUS logic level FET

File Size 253.26K  /  16 Page

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    BUK9MPP-55PRR

NXP Semiconductors N.V.
Part No. BUK9MPP-55PRR
OCR Text ...tatic characteristics, FET1 and FET2 ID/Isense 5130 55 5700 - 6270 - A/A V V(BR)DSS drain-source breakdown voltage NXP ...16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S2 S2 D2 D1 KS1 S1 ...
Description Dual TrenchPLUS logic level FET 9160 mA, 55 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-013AC

File Size 243.57K  /  15 Page

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    NXP Semiconductors N.V.
Part No. BUK9MTT-65PBB
OCR Text ...tions min typ max unit fet1 and fet2 static characteristics r dson drain-source on-state resistance v gs =5v; i d =3a; t j =25c; see fig...16 nxp semiconductors buk9mtt-65pbb dual trenchplus fet logic level fet 2. pinning information 3. ...
Description Dual TrenchPLUS FET Logic Level FET

File Size 186.90K  /  16 Page

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    NXP Semiconductors N.V.
Part No. BUK9MJJ-65PLL
OCR Text ...tions min typ max unit fet1 and fet2 static characteristics r dson drain-source on-state resistance v gs =5v; i d =10a; t j =25c; see figure 15 ; see figure 16 -14.517m ? i d /i sense ratio of drain current to sense current t j =25c;...
Description Dual TrenchPLUS FET Logic Level FET

File Size 190.97K  /  16 Page

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    NXP Semiconductors N.V.
Part No. BUK9MHH-65PNN
OCR Text ...tions min typ max unit fet1 and fet2 static characteristics r dson drain-source on-state resistance v gs =5v; i d =10a; t j =25c; see figure 15 ; see figure 16 - 9.8 11.5 m ? i d /i sense ratio of drain current to sense current t j ...
Description Dual TrenchPLUS FET Logic Level FET

File Size 192.37K  /  16 Page

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