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| Part No. |
IRFS4229PBF
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| OCR Text |
...stance per silicon area and low epulse rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and... |
| Description |
PDP SWITCH
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| File Size |
236.97K /
9 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRGI4055PBF
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| OCR Text |
...w VCE(on) and Energy per Pulse (epulse for improved panel efficiency l High repetitive peak current capability l Lead Free package
IRGI4055PbF
Key Parameters
300 1.10 220 150 V V A C
VCE min VCE(ON) typ. @ 36A IRP max @ TC= 25C c TJ... |
| Description |
PDP TRENCH IGBT
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| File Size |
248.54K /
7 Page |
View
it Online |
Download Datasheet
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epulse Found Datasheets File :: 38 Search Time::0.75ms Page :: | 1 | <2> | 3 | 4 | |
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