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Alpha & Omega Semiconductor
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| Part No. |
AON7404G
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| OCR Text |
...avalanche current c continuous drain current g thermal characteristics parameter max t a =70c 3.2 c units junction and storage temperature range -55 to 150 typ p dsm w t a =25c 5 power dissipation a maximum junction-to-ambient a c/w r ... |
| Description |
Single LV MOSFETs (12V - 30V)
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| File Size |
213.83K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AO7408
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| OCR Text |
...1.5 16 t a =25c t a =70c pulsed drain current c continuous drain current v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted v 8 gate-source voltage drain-source voltage 20 parameter typ max c/w r ja 300 34... |
| Description |
Single LV MOSFETs (12V - 30V)
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| File Size |
248.50K /
5 Page |
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it Online |
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Microchip
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| Part No. |
MCP9501PT-045E/OT
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| OCR Text |
...ion options: - active low, open-drain output: mcp9501/3 C uses external pull-up resistor - active-high, push-pull output: mcp9502/4 user selectable hysteresis: 2c or 10c (typical) 5-lead sot-23 package applications power supply critical ... |
| Description |
Thermal Management Products- Temperature Sensors
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| File Size |
288.39K /
20 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STU3N80K5
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| OCR Text |
...s gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 2.5 (1) 1. for to-220fp limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 1.6 a i dm (2) 2. pulse width limited by safe ope... |
| Description |
N-channel 800 V, 2.8 Ohm typ., 2.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
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| File Size |
1,555.17K /
23 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AONP36336
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| OCR Text |
...5 10 a a 18 t a =25c p d pulsed drain current c 21 t a =70c power dissipation b t c =100c 13 110 parameter t a =70c c units junction and storage temperature range -55 to 150 p dsm w t a =25c power dissipation a 2 3.4 2.2 3.1 maximum jun... |
| Description |
Asymmetric LV MOSFETs (12V - 30V)
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| File Size |
452.52K /
10 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF27S60
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| OCR Text |
... t l symbol r ja r cs r jc * drain current limited by maximum junction tempera ture. -55 to 150 300 aotf27s60l 65 -- 3.1 2.5 aotf27s60l 600 30 27* 17* 110 aotf27s60 single pulsed avalanche energy g w p d repetitive avalanche energy c 5... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
475.03K /
7 Page |
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it Online |
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Wolfspeed
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| Part No. |
PXAC243502FV-V1
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| OCR Text |
...n g ps 14.0 15.0 ? db drain ef?ciency h d 42 45 ? % adjacent channel power ratio acpr ? ?32 ?26 dbc pxac243502fv package h-37275-4 5 15 25 35 45 55 10 12 14 16 18 20 2150 2250 2350 2450 2550 drain efficiency (%... |
| Description |
High Power RF LDMOS FET 350W, 28V, 2300 - 2400 MHz
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| File Size |
337.52K /
10 Page |
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it Online |
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Nexperia
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| Part No. |
PMZ320UPE
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| OCR Text |
...onditions min typ max unit v ds drain-source voltage - - -30 v v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = -4.5 v; t amb = 25 c [1] - - -1 a static characteristics r dson drain-source on-state resistance v gs =... |
| Description |
30 V, P-channel Trench MOSFET
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| File Size |
307.64K /
15 Page |
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it Online |
Download Datasheet |
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