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  di-500 Datasheet PDF File

For di-500 Found Datasheets File :: 31569    Search Time::2.359ms    
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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...E Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (t...500 4 Coes Cres 0 1 10 100 0 0 20 40 60 80 100 120 VCE , Collector-to-Emitter Voltage (...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26

DYNEX[Dynex Semiconductor]
Part No. DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26
OCR Text ...RAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2800V 844A 11250A 1000V/s 500A/s APPLICATIONS s High Power Drives s High Voltage Power Supplies s ...500 0.91 0.65 1.5 Units mA V/s A/s A/s V m s dI/dt Rate of rise of on-state current VT(TO) ...
Description Phase Control Thyristor

File Size 114.80K  /  8 Page

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    DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45
OCR Text ...RAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 4800V 529A 7500A 1000V/s 150A/s APPLICATIONS s High Power Drives s High Voltage Power Supplies s D...500 Units mA V/s A/s A/s V m s mA mA s dI/dt Rate of rise of on-state current VT(TO) rT tgd...
Description Phase Control Thyristor

File Size 108.66K  /  8 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ... (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (t...500 1000 1500 2000 F o rw a rd V o lta g e D ro p - V F M (V ) d i f /d t - (A / s) ...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ... (1) Cies Coes Cres trr Irr Qrr di (rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (...500 1000 1500 2000 F o rw a rd V o lta g e D ro p - V FM (V ) di f /dt - (A /s) Fi...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...) Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (t...500 1000 F o rw a rd V o lta ge D ro p - V FM (V ) d i f /dt - (A /s) 1500 2000 Fi...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ... = 25C, IF = 43A --- 220 230 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; ...500 VDS L D R IV E R 400 TOP BOTTOM ID 18A 30A 43A RG VV 2 0GS D .U .T IA S...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ... = 25C, IF = 43A --- 220 230 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; ...500 TOP 400 VDS L D R IV E R BOTTOM ID 18A 30A 43A RG VV 2 0GS D .U .T IA...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...J = 25C, IF = 22A --- 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitiv...500 0 1 10 100 0 0 20 40 60 FOR TEST CIRCUIT SEE FIGURE 13 80 100 120 VDS , Drain-to-So...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...J = 25C, IF = 22A --- 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitiv...500 0 1 10 100 0 0 20 40 60 FOR TEST CIRCUIT SEE FIGURE 13 80 100 120 VDS , Drain-to-So...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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For di-500 Found Datasheets File :: 31569    Search Time::2.359ms    
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