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				NXP Semiconductors / Philips Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
OCR Text	diSCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAT54W series Schottky barrier (double) diodes Product specification Supe...do so at their own risk and agree to fully indemnify Philips for any damages resulting from such imp...
Description	Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Schottky barrier double diodes
File Size	29.07K / 5 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26
OCR Text	...RAMETERS VDRM IT(AV) ITSM dVdt* di/dt 2800V 844A 11250A 1000V/s 500A/s APPLICATIONS s High Power Drives s High Voltage Power Supplies s ...do NOT SCALE. Hole O3.6x2.0 deep (in both electrodes) Cathode tab Cathode O58.5 max O34 nom ...
Description	Phase Control Thyristor
File Size	114.80K / 8 Page	View it Online	Download Datasheet

				Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
Part No.	DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45
OCR Text	...RAMETERS VDRM IT(AV) ITSM dVdt* di/dt 4800V 529A 7500A 1000V/s 150A/s APPLICATIONS s High Power Drives s High Voltage Power Supplies s D...do NOT SCALE. 2 holes fl3.6x2.0 deep (in both electrodes) Cathode tab Cathode fl58.5 max fl...
Description	Phase Control Thyristor
File Size	108.66K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3515L IRF3515S
OCR Text	...J = 25C, IF = 25A --- 1.6 2.4 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com ...do N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8...
Description	Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A) Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)
File Size	122.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...= 0V TJ = 25C, IF = 16A, VR=10V di/dt = 100A/s TJ = 125C, IF = 16A, VR=10V di/dt = 100A/s D S 2 www.irf.com IRF3711/3711S/371...do NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 178...
Description	Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	... VGS = 0V TJ = 25C, I F = 2.0A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature...do ES NO T INCLU DE M OL D P RO T RUS IO NS MO LD PR O TRU SIO NS NO T T O E XCEE D 0.25 (.006). 6 D...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9953
OCR Text	...VGS = 0V TJ = 25C, IF = -1.25A di/dt = -100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See f...do ES NO T INCLU DE M OL D P RO T RUS IO NS MO LD PR O TRU SIO NS NO T T O E XCEE D 0.25 (.006). 6 D...
Description	Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)
File Size	98.36K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9956
OCR Text	...VGS = 0V TJ = 25C, I F = 1.25A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature...do ES NO T INCLU DE M OL D P RO T RUS IO NS MO LD PR O TRU SIO NS NO T T O E XCEE D 0.25 (.006). 6 D...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
File Size	98.88K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	...= 25C, IF = -6.7A --- 96 190 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; ...do NO T INCLUDE BURRS. LE AD ASS IG NM ENT S 1 - G AT E 2 - DRA IN 3 - S OU RC E 8.89 (.350) 1...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text	...= 25C, IF = -11A --- 320 640 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; ...do NO T INCLUDE BURRS. LE AD ASS IG NM ENT S 1 - G AT E 2 - DRA IN 3 - S OU RC E 8.89 (.350) 1...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
File Size	307.08K / 10 Page	View it Online	Download Datasheet

For di do Found Datasheets File :: 15068 Search Time::1.375ms
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