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  6.5v 15a Datasheet PDF File

For 6.5v 15a Found Datasheets File :: 5176    Search Time::4.312ms    
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    2SC5032

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5032
OCR Text ...(TC=25C) Ratings 500 500 400 7 6 3 1.2 30 2 150 -55 to +150 Unit V 15.00.3 3.00.2 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 ...5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A,...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 57.59K  /  3 Page

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    2SC5037 2SC5037A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5037 2SC5037A
OCR Text ...VCC = 250V 10 0.7 2.5 0.3 800 8 6 1.5 1.5 V V MHz s s s min typ max 50 50 50 Unit A A A V 1 Power Transistors PC -- Ta 60 6 (1) TC=T...5V 100 fT -- IC VCE=5V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forwa...
Description Silicon NPN triple diffusion planar type

File Size 62.18K  /  3 Page

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    2SD1051

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1051
OCR Text 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05 1.250.05 ...5V, IE = 0 IC = 1mA, IE = 0 IC = 2mA, IB = 0 VCE = 5V, IC = IC = 2A, IB = 1A*2 IC = 1.5A, IB = 0.15a...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

File Size 39.28K  /  2 Page

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    2SD862

WINGS[Wing Shing Computer Components]
Part No. 2SD862
OCR Text ...IN -55 - Tmb 25 MAX 20 20 6 2 0.5 10 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hF...5V IC=1mA IC = 1.5A; IB = 0.15a IC = 100mA; VCE = 2V IC = 0.5A; VCE = 12V VCB = 10V TYP 20 60 80 ...
Description Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

File Size 61.80K  /  1 Page

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    2SD958

PANASONIC[Panasonic Semiconductor]
Part No. 2SD958
OCR Text ...cation Complementary to 2SB788 6.90.1 0.4 Unit: mm 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q q 1.5 1.5 R0.9 R0.9...5V, IC = 2mA IC = 20mA, IB = 2mA VCB = 5V, IE = -2mA, f = 200MHz VCE = 40V, IC = 2mA, GV = 80dB Rg =...
Description Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)

File Size 36.40K  /  2 Page

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    IR2110E6

IRF[International Rectifier]
Part No. IR2110E6
OCR Text 6.065 IR2110E6 HIGH AND LOW SIDE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolera...5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown lo...
Description HIGH AND LOW SIDE DRIVER

File Size 306.76K  /  14 Page

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    IR2110L6

IRF[International Rectifier]
Part No. IR2110L6
OCR Text 6.074 IR2110L6 HIGH AND LOW SIDE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolera...5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown lo...
Description HIGH AND LOW SIDE DRIVER

File Size 337.18K  /  14 Page

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    IR2110L

IRF[International Rectifier]
Part No. IR2110L
OCR Text 6.085 IR2110L4 HIGH AND LOW SIDE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolera...5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown lo...
Description HIGH AND LOW SIDE DRIVER

File Size 131.31K  /  14 Page

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...erse Leakage --- Typ. --- 0.021 6.3 9.8 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 9.0 VGS = 10V, ID = 15a m 13.5 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 16V, VG...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...akage --- Typ. --- 0.027 9.0 12.6 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 12.5 VGS = 10V, ID = 15a m 17 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V ...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

File Size 141.65K  /  10 Page

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