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5dbm Datasheet PDF File

For 5dbm Found Datasheets File :: 1808 Search Time::1.453ms
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				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TIM7179-8UL
OCR Text	5dbm at 7.1GHz to 7.9GHz HIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain ...
Description	MICROWAVE POWER GaAs FET
File Size	68.68K / 4 Page	View it Online	Download Datasheet

				ATMEL Corporation
Part No.	ATA5781 ATA5783
OCR Text	...ester coded) at 433.92mhz ?108.5dbm at 20kbit/s ? f = 20khz bwif = 165khz ?111dbm at 10kbit/s ? f = 10khz bwif = 165khz ?114dbm at 5kbit/s ? f = 5khz bwif = 165khz ?122.5dbm at 0.75kbit/s ? f = 0.75khz bwif = 25khz ask sen...
Description	AVR microcontroller core with 1Kbyte SRAM and 24Kbyte RF library in firmware (ROM)
File Size	1,605.04K / 20 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TIM6472-45SL
OCR Text	...GH GAIN IM3=-45 dBc at Pout= 35.5dbm G1dB=8.0dB at 6.4GHz to 7.2GHz Single Carrier Level n BROAD BAND INTERNALLY MATCHED FET n HIGH POWER n HERMETICALLY SEALED PACKAGE P1dB=46.5dbm at 6.4GHz to 7.2GHz RF PERFORMANCE SPECIFICATIONS ( Ta= ...
Description	MICROWAVE POWER GaAs FET
File Size	506.76K / 4 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TIM5359-45SL
OCR Text	...TORTION IM3=-45 dBc at Pout= 35.5dbm Single Carrier Level HIGH POWER P1dB=46.5dbm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS C...
Description	MICROWAVE SEMICONDUCTOR
File Size	110.62K / 4 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RF5110G07 RF5110GTR7
OCR Text	...C =3.6V, VAPC1,2 =2.8V, PIN =+4.5dbm, Freq=880MHz to 915MHz, 37.5% Duty Cycle, pulse width=1731s 880 to 915 800 to 950 33.8 33.1 50 57 12 5 34.5 MHz MHz dBm dBm % % % +9.5 -72 dBm dBm See evaluation board schematic. Using different...
Description	3V GSM POWER AMPLIFIER
File Size	828.59K / 22 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
Part No.	TIM4450-60SL
OCR Text	...TORTION IM3=-45 dBc at Pout= 36.5dbm Single Carrier Level T HIGH POWER P1dB=48.0dBm at 4.4GHz to 5.0GHz T HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICA...
Description	LOW INTERMODULATION DISTORTION
File Size	79.32K / 4 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TIM4450-16UL
OCR Text	5dbm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point ...
Description	MICROWAVE POWER GaAs FET
File Size	44.43K / 4 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TIM3438-16SL
OCR Text	...TORTION IM3=-45 dBc at Pout= 31.5dbm Single Carrier Level n HIGH POWER P1dB=42.5dbm at 3.4GHz to 3.8GHz n HIGH GAIN G1dB=12.5dB at 3.4GHz to 3.8GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECI...
Description	MICROWAVE POWER GaAs FET
File Size	39.63K / 2 Page	View it Online	Download Datasheet

				M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
Part No.	NPT1012 NPT1012-15
OCR Text	... 2013 npt1012 page 4 72% 43.5dbm figure 4 - load-pull contours 1 , 500mhz, p in = 14.5dbm, z s = 7.0 + j8.2 66% 44.0dbm note 1: 500mhz and 900mhz load-pull data collected using a 4.7 resistor in the rf path added for stability 72...
Description	Gallium Nitride 28V, 25W RF Power Transistor
File Size	1,010.53K / 8 Page	View it Online	Download Datasheet

				M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu... List of Unclassifed Man...
Part No.	NPT1010 NPT1010-15
OCR Text	..., p in = 32.5dbm, z s = 1.1 - j0.5 table 1: optimum source and load impedances for cw gain, drain effciency, and output power performance z s is the source impedance presented to the device. z l is the load imped...
Description	Gallium Nitride 28V, 100W RF Power Transistor
File Size	1,223.32K / 10 Page	View it Online	Download Datasheet

For 5dbm Found Datasheets File :: 1808 Search Time::1.453ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |