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United Monolithic Semic... UMS[United Monolithic Semiconductors] United Monolithic Semiconductors GmbH
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| Part No. |
CHA2094B99F_00 CHA2094B CHA2094B99F/00
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| OCR Text |
...sion Noise figure
Min
36 18 5
Typ
Max
40
Unit
GHz dB dBm
21 8 3.0 4.0
dB
ESD Protection : Electrostatic discharge se...90,11 -109,61 -126,74 -146,49 -160,72 -175,92 172,60 156,97 149,30 134,15 126,00 119,05 102,75 79,31... |
| Description |
36-40GHz Low Noise High Gain Amplifier 36 - 40GHz的低噪声高增益放大器
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| File Size |
109.03K /
8 Page |
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it Online |
Download Datasheet
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United Monolithic Semicondu... United Monolithic Semiconductors GmbH UMS[United Monolithic Semiconductors]
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| Part No. |
CHA2194-99F_00 CHA2194 CHA2194-99F/00 CHA2193-99F00
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| OCR Text |
...m
Gain & NF ( dB )
15,00
5,00
-5,00
-15,00 dBS21 NF dBS11 dBS22 -25,00 44 46 48 50 52 54 56 58 60 Frequency ( GHz )
Main...90 -14,38 -14,17 -14,23 -14,45 -13,44 -11,65 -9,14 -6,61 -4,21 -3,45 -2,71 -2,35
Pha deg -56,73 -... |
| Description |
36-44GHz Low Noise Amplifier 36 - 44GHz低噪声放大器 20-30GHz low noise amplifier
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| File Size |
192.49K /
10 Page |
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it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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| Part No. |
BFP540ESD
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| OCR Text |
...V (HBM) * Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB * Gold metallization for high reliability * SIEGET 45 - Line * Short term desc...90
100
I [mA]
I [mA]
Power gain Gma, Gms = (f) VCE = 3 V, I C = 25 mA
Power gain Gma... |
| Description |
NPN Silicon RF Transistor
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| File Size |
224.54K /
9 Page |
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it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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| Part No. |
BFR740L3
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| OCR Text |
... Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.8 dB at 6 GHz * High maximum stable gain Gms = 24 dB at 1.8 G...90 105 120 C
150
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T... |
| Description |
NPN Silicon Germanium RF Transistor
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| File Size |
133.47K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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