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4870 Datasheet PDF File

For 4870 Found Datasheets File :: 92 Search Time::1.469ms
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				Vishay Siliconix
Part No.	VSKT16216PBF
OCR Text	...0 - 40 to 125 VSK.162.. 160 355 4870 5100 119 108 1190 kA2s kA2s V C A UNITS A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 VSK.136 VSK.142 VSK.162 08 12 14 16 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE ...
Description	Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
File Size	387.75K / 12 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	VSKT14216PBF VSKT136 VSKT13616PBF
OCR Text	...0 - 40 to 125 VSK.162.. 160 355 4870 5100 119 108 1190 kA2s kA2s V C A UNITS A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 VSK.136 VSK.142 VSK.162 08 12 14 16 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE ...
Description	Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
File Size	386.47K / 12 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	SR202
OCR Text	...Page 1 of 2 FAX-BACK: (805) 446-4870 www.diodes.com DIODES INC 3050 East Hillcrest Drive, Westlake Village, CA 91362-3154 TEL: (805) 446-4800 FAX: (805) 446-4850 Document Number: 23020 Revision A-5 Page 2 of 2 FAX-BACK: (805) 446-4870 ww...
Description	2.0 AMPERE SCHOTTKY BARRIER RECTIFIER
File Size	48.32K / 2 Page	View it Online	Download Datasheet

				NEC
Part No.	2SC4955 2SC4955-T1 2SC4955-T2
OCR Text	...0 0.5600 0.5520 0.5260 0.5160 0.4870 S22 ANG -8.7 -16.0 -23.4 -29.1 -33.7 -37.9 -41.8 -43.9 -46.2 -50.5 -53.7 -54.5 -58.3 -61.4 -64.7 (VCE = 3 V, IC = 3 mA, ZO = 50 ) FREQUENCY (GHz) 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 ...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
File Size	51.71K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC4955-T2 2SC4955-T1 2SC4955
OCR Text	...0 0.5600 0.5520 0.5260 0.5160 0.4870 S22 ANG -8.7 -16.0 -23.4 -29.1 -33.7 -37.9 -41.8 -43.9 -46.2 -50.5 -53.7 -54.5 -58.3 -61.4 -64.7 (VCE = 3 V, IC = 3 mA, ZO = 50 ) FREQUENCY (GHz) 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 ...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
File Size	43.45K / 6 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC] http://
Part No.	UPA806T UPA806T-T1 UPA806
OCR Text	...G 0.8850 0.7210 0.6030 0.5230 0.4870 0.4600 0.4360 0.4170 0.4020 0.3940 0.3710 0.3500 0.3560 0.3520 0.3410 S22 ANG -19.7 -30.3 -34.5 -36.7 -38.0 -38.8 -40.4 -42.6 -43.9 -45.8 -50.3 -50.2 -51.2 -58.1 -56.9 VCE = 3 V, IC = 10 mA, ZO = 50 ...
Description	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
File Size	46.44K / 6 Page	View it Online	Download Datasheet

				NEC
Part No.	2SC4959-T1
OCR Text	...G 0.8850 0.7210 0.6030 0.5230 0.4870 0.4600 0.4360 0.4170 0.4020 0.3940 0.3710 0.3500 0.3560 0.3520 0.3410 S22 ANG -19.7 -30.3 -34.5 -36.7 -38.0 -38.8 -40.4 -42.6 -43.9 -45.8 -50.3 -50.2 -51.2 -58.1 -56.9 (VCE = 3 V, IC = 10 mA, ZO = 50 ...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
File Size	53.78K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC, Corp.
Part No.	2SC4959 2SC4959-T2 2SC4959-T1 2SC4959NE68530
OCR Text	...G 0.8850 0.7210 0.6030 0.5230 0.4870 0.4600 0.4360 0.4170 0.4020 0.3940 0.3710 0.3500 0.3560 0.3520 0.3410 S22 ANG -19.7 -30.3 -34.5 -36.7 -38.0 -38.8 -40.4 -42.6 -43.9 -45.8 -50.3 -50.2 -51.2 -58.1 -56.9 (VCE = 3 V, IC = 10 mA, ZO = 50 ...
Description	Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD 高频低噪声放大器NPN硅外延晶体管超小型模
File Size	45.62K / 6 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	BAS85T
OCR Text	...Page 1 of 1 FAX-BACK: (805) 446-4870 www.diodes.com
Description	SILICON SCHOTTKY BARRIER DIODE
File Size	45.81K / 1 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPS60B120KD
OCR Text	...C = 600V 165 248 VGE = 15V 3214 4870 J IC = 60A, VCC = 600V 4783 5450 VGE = 15V,RG = 4.7, L =200H 8000 10320 Ls = 150nH T J = 25C 5032 6890 TJ = 125C 7457 8385 J Energy losses include "tail" and 12500 15275 diode reverse recovery. 72 94 IC ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	132.76K / 12 Page	View it Online	Download Datasheet

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