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4.3mh Datasheet PDF File

For 4.3mh Found Datasheets File :: 1000 Search Time::1.86ms
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				FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
Part No.	IRFS450B IRFS450 FS450 EA0450M
OCR Text	...e 1) IRFS450B 500 9.6 6.1 38.4 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage ...3mH, IAS = 9.6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 14A, di/dt 300A/s, VDD BVDSS, Star...
Description	Discrete MOSFETs 500V N-Channel MOSFET
File Size	685.08K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065 APT8065AVR
OCR Text	...200 1.6 -55 to 150 300 11.5 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...3mH, R = 25, Peak I = 11.5A j G L 1 Repetitive Rating: Pulse width limited by maximum junction ...
Description	POWER MOS V 800V 11.5A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.68K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	...200 1.6 -55 to 150 300 11.5 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...3mH, R = 25, Peak I = 11.5A j G L 1 Repetitive Rating: Pulse width limited by maximum junction ...
Description	POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SC3830
OCR Text	...ns MT-25(TO220) 3.00.2 10.20.2 4.80.2 2.00.1 A 16.00.7 V V MHz pF 8.80.2 a b o3.750.2 12.0min 4.0max V 1.35 ...3mH IB2=-0.5A Duty:less than 1% 30 ite he at si nk 20 0.1 0.05 0.02 7 Without Heatsin...
Description	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
File Size	23.71K / 1 Page	View it Online	Download Datasheet

				Sanken electric
Part No.	2SC3831
OCR Text	... 2SC3831 600 500 10 10(Pulse20) 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose ...3mH I B 2 =-0.5A Duty:less than 1% he 50 at si nk 0.1 0.05 Without Heatsink Natural C...
Description	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
File Size	24.42K / 1 Page	View it Online	Download Datasheet

				Sanken Electric Co.,Ltd.
Part No.	2SC3832
OCR Text	...ns MT-25(TO220) 3.00.2 10.20.2 4.80.2 2.00.1 A A V V MHz pF 2.5 12.0min 4.0max 16.00.7 8.80.2 a b o3.750.2 V 1.35 0.65 ...3mH -IB2=1A Duty:less than 1% nk 20 0.5 Without Heatsink Natural Cooling 0.5 10 Wi...
Description	Silicon NPN Transistor Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍扩散平面晶体管（高压和高速开关晶体管
File Size	23.16K / 1 Page	View it Online	Download Datasheet

				Sanken Electric Co.,Ltd. SANKEN[Sanken electric]
Part No.	2SC3833
OCR Text	... 2SC3833 500 400 10 12(Pulse24) 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose ...3mH -IB2=1A Duty:less than 1% 0.01 5 10 50 100 500 Collector-Emitter Voltage V C E( V) 0.01 5 ...
Description	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
File Size	24.68K / 1 Page	View it Online	Download Datasheet

				Sanken Electric Co.,Ltd. SANKEN[Sanken electric]
Part No.	2SC3890
OCR Text	...ternal Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sa...3mH -IB2=1A Duty:less than 1% nk 0.5 0.5 10 Without Heatsink 2 0.1 5 10 50 100 500 Co...
Description	Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍扩散平面晶体管（高压和高速开关晶体管 Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
File Size	23.91K / 1 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5Y5305CM
OCR Text	...3in./1.6mm from case for 10sec) 4.3 (Typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 11/3/00 IRF5Y5305CM ...3mH Peak IAS = -16A, RG= 25 ISD -16A, di/dt -213 A/s, Pulse width 400 s; Duty Cycle 2% VDD...
Description	POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A) POWER MOSFET P-CHANNEL(Vdss=-55V Rds(on)=0.065ohm Id=-18A) POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*) -55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
File Size	106.37K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFW630 IRFW630B IRFI630 IRFI630B IRFI630BTUFP001
OCR Text	...* * * * 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche teste...3mH, IAS = 9.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9.0A, di/dt 300A/s, VDD BVDSS, Sta...
Description	200V N-Channel B-FET / Substitute of IRFI630A 200V N-Channel MOSFET
File Size	646.27K / 9 Page	View it Online	Download Datasheet

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