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  4.2mh Datasheet PDF File

For 4.2mh Found Datasheets File :: 674    Search Time::1.516ms    
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    FQD5N20L FQU5N20L FQD5N20LTF FQD5N20LTM

FAIRCHILD[Fairchild Semiconductor]
Part No. FQD5N20L FQU5N20L FQD5N20LTF FQD5N20LTM
OCR Text ... 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level ...2mH, IAS = 3.8A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4.5A, di/dt 300A/s, VDD BVDSS, Sta...
Description 200V LOGIC N-Channel MOSFET
200V N-Channel Logic Level QFET

File Size 528.62K  /  9 Page

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    IRL2910 L2910

International Rectifier
Part No. IRL2910 L2910
OCR Text ...S = 5.0V, ID = 29A 0.040 VGS = 4.0V, ID = 24A 2.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 29A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V...2mH RG = 25, IAS = 29A. (See Figure 12) ISD 29A, di/dt 490A/s, VDD V(BR)DSS, Pulse width 30...
Description RES THICK FILM POWER 10 OHM 5W
HEXFET Power MOSFET

File Size 120.70K  /  8 Page

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    IRLI2910

IRF[International Rectifier]
Part No. IRLI2910
OCR Text ...l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRLI2910 HEXFET(R) Power MOSFET D VDSS = 100V RDS(on)...2mH RG = 25, IAS = 29A. (See Figure 12) ISD 29A, di/dt 490A/s, VDD V(BR)DSS, TJ 175C Pulse ...
Description HEXFET Power MOSFET

File Size 140.03K  /  8 Page

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    IRLW1520A IRLW_I520A IRLW/I520A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRLW1520A IRLW_I520A IRLW/I520A
OCR Text ...Value 100 9.2 6.5 32 20 112 9.2 4.9 6.5 3.8 49 0.33 - 55 to +175 Units V A A V mJ A mJ V/ns W W W/ 300 Thermal Resistance Symbol ...2mH, IAS=9.2A, VDD=25V, RG=27, Starting TJ =25 ISD9.2A, di/dt300A/s, VDDBVDSS , Starting TJ =25 Pu...
Description Advanced Power MOSFET

File Size 231.40K  /  7 Page

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    BUL1403ED 5991

STMICROELECTRONICS[STMicroelectronics]
Part No. BUL1403ED 5991
OCR Text ...20 3 1 2 APPLICATIONS s 2/4 LAMPS ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING 277 VAC PUSH-PULL CONFIGURATION DESCRIPTION The BUL1403E...2mH Rg T1 Vin Tp SC12620 C TUT Vbb + 4/6 BUL1403ED TO-220 MECHANICAL DATA DIM. MIN...
Description From old datasheet system
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 61.66K  /  6 Page

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    IRLW530A IRLWI530A IRLI530A IRLW530ATM

FAIRCHILD[Fairchild Semiconductor]
Part No. IRLW530A IRLWI530A IRLI530A IRLW530ATM
OCR Text ...0C VGS=5V,ID=7A VDS=40V,ID=7A (4) (4) VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=14A, RG=6 See Fig 13 VDS=80V,VGS=5V, ID=14A ...2mH, IAS=14A, VDD=25V, RG=27, Starting TJ =25C (3) ISD 14A, di/dt 350A/s, VDD BV DSS , Starting T...
Description 100V N-Channel Logic Level A-FET
ADVANCED POWER MOSFET

File Size 271.41K  /  9 Page

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    FDU2572 FDD2572

FAIRCHILD[Fairchild Semiconductor]
Part No. FDU2572 FDD2572
OCR Text ...ture o Ratings 150 20 29 20 4 Figure 4 36 135 0.9 -55 to 175 Units V V A A A mJ W W/oC o C Thermal Characteristics RJC RJA RJ...2mH, IAS = 19A. (c)2002 Fairchild Semiconductor Corporation FDD2572 / FDU2572 Rev. B FDD257...
Description N-Channel PowerTrench MOSFET 150V, 29A, 54m?/a>
N-Channel PowerTrench MOSFET 150V, 29A, 54mз
N-Channel PowerTrench MOSFET 150V/ 29A/ 54m
N-Channel PowerTrench MOSFET 150V, 29A, 54m?/a>

File Size 184.32K  /  11 Page

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    HGTG11N120CND

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG11N120CND
OCR Text ...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...2mH, Test Circuit (Figure 20) (c)2001 Fairchild Semiconductor Corporation HGTG11N120CND Rev. B...
Description 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 108.55K  /  8 Page

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    HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
OCR Text ...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...2mH Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 10A VCE = 960V VGE = ...
Description 1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT

File Size 175.79K  /  8 Page

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    IRFU210B IRFR210B IRFU210BTLTUFP001 IRFU210BTUFP001 IRFR210BTFFP001

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFU210B IRFR210B IRFU210BTLTUFP001 IRFU210BTUFP001 IRFR210BTFFP001
OCR Text ... Junction-to-Ambient Typ ---Max 4.9 50 110 Units C/W C/W C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2001 Fair...2mH, IAS = 2.7A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 3.3A, di/dt 300A/s, VDD BVDSS, Sta...
Description 200V N-Channel B-FET / Substitute of IRFR210 & IRFR210A
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFU210 & IRFU210A

File Size 652.59K  /  9 Page

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