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  300-400v Datasheet PDF File

For 300-400v Found Datasheets File :: 9175    Search Time::4.938ms    
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    ST Microelectronics
Part No. STTH506D STTH506DTI
OCR Text ...5 40 45 50 0 50 100 150 200 250 300 350 400 450 500 t (ns) rr v =400v t =125c r j di /dt(a/s) f i =2 x i f f(av) i=i f f(av) i =0.5 x i f f(av) fig. 5: reverse recovery time versus d i f /dt (typical values). 0 1 2 3 4 5 6 7 8 9 0 50 100 15...
Description TANDEM 600V HYPERFAST BOOST DIODE

File Size 56.84K  /  5 Page

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    Alpha & Omega Semiconductor
Part No. AOTF42S60
OCR Text ...aximum junction-to-ambient a,d 300 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j c aotf42s60 top vie...400v v v gs =10v, i d =21a, t j =150c drain-source breakdown voltage i d =250 a, v gs =0v, t j =25...
Description Single HV MOSFETs (500V - 1000V)

File Size 282.90K  /  6 Page

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    Alpha & Omega Semiconductor
Part No. AOTF12T50P
OCR Text ...ermal characteristics parameter 300 pulsed drain current c 8* t c =25c rev.2.0: september 2014 www.aosmd.com page 1 of 6 do...400v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related h...
Description Single HV MOSFETs (500V - 1000V)

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    IDD03E6007

Infineon Technologies AG
Part No. IDD03E6007
OCR Text ... v r = 400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 20 40 60 80 100 120 140 160 180 ns 220 t rr 6a 3a 1.5a 6 typ. reverse recovery charge q rr = f (d i f /d t ) parameter: v r = 400v, t j = 125 c...
Description Fast Switching EmCon Diode

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    IRGB4060DPBF

International Rectifier
Part No. IRGB4060DPBF
OCR Text ...8 32 20 30 99 50 -55 to + 175 300 (0.063 in. (1.6mm) from case) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJ...400V VGE = 15V Conditions Ref.Fig 24 CT1 IC = 8A, VCC = 400V, VGE = 15V RG = 47, L=1mH, LS=...
Description INSULATED GATE BIPOLAR TRANSISTOR

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    APTCV60TLM24T3G

Microsemi Corporation
Part No. APTCV60TLM24T3G
OCR Text ... 95A ; RG = 2.5 Min Typ 14.4 17 300 68 102 21 30 100 45 1350 1040 2200 1270 0.27 J ns nC Max Unit nF C/W www.microsemi.com 2 - 13 ...400V IF = 30A VR = 400V Test Conditions VR=600V Tj = 25C Tj = 125C Tc = 80C Min 600 Typ Max 25 500 3...
Description CoolMOS & Trench Field Stop IGBT

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    APT43M60B209

Microsemi Corporation
Part No. APT43M60B209
OCR Text ...icrosemi.com N*m -55 0.11 150 C 300 oz g in*lbf 04-2009 050-8070 Rev D Min Typ Max 780 0.16 Unit W C/W Static Characteristi...400V 5 Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Dr...
Description N-Channel MOSFET

File Size 111.98K  /  4 Page

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    ST Microelectronics
Part No. STIL08-T5 STIL04
OCR Text ...pen t j = 25c 55 a t j = 150c 300 300 i rout (on)** max reverse current with driver current v rout = 400v i pt1 = i pt2 = 10ma t j = 150c 300 300 a v t0 threshold direct voltage for one power switch i out(av) = 4a t j = 150c 0.7...
Description AC INRUSH CURRENT LIMITER

File Size 99.03K  /  10 Page

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    Alpha & Omega Semiconductor
Part No. AOW4S60
OCR Text ...aximum junction-to-ambient a,d 300 65 65 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j top view ...400v v v gs =10v, i d =2a, t j =150c drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c...
Description Single HV MOSFETs (500V - 1000V)

File Size 296.02K  /  6 Page

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    IRHNJ7430SE

International Rectifier
Part No. IRHNJ7430SE
OCR Text ...6 20 150 4.4 7.5 2.5 -55 to 150 300 (for 5s) 1.0(Typical) Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g www.irf.com ...400V ,VGS=0V VDS = 400V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 4.4A VDS = 250V VDD...
Description 500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

File Size 119.21K  /  8 Page

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