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ST Microelectronics
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| Part No. |
STD5NB20
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| OCR Text |
...v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d =2.5 a 0.7 0.8 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 5a dynamic symbol parameter test conditions... |
| Description |
N - CHANNEL PowerMESHO MOSFET
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| File Size |
65.65K /
5 Page |
View
it Online |
Download Datasheet
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SGS Thomson Microelectronics
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| Part No. |
STW45NM50
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| OCR Text |
...ltage v ds =v gs ,i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 22.5a 0.08 0.1 w i d(on) on state drain current v ds >i d(on) xr ds(on)max, v gs =10v 45 a symbol parameter test conditions min. typ. max. uni... |
| Description |
N-CHANNEL 500V - 0.07Ohm - 45A TO-247 Mdmesh Power MOSFET
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| File Size |
90.09K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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