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SAMSUNG
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| Part No. |
K9K4G08U0M
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| OCR Text |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. Add the Rp vs tr ,tf ...Word - Block Erase -X8 device(K9F2G08X0M) : (128K + 4K)Byte -X16 device(K9F2G16X0M) : (64K + 2K)Word... |
| Description |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
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| File Size |
573.66K /
35 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric Corporation
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| Part No. |
M2V56S20TP-8 M2V56S40TP-8 M2V56S30TP-8
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| OCR Text |
256m synchronous dram 1 m2v56s20tp is a 4-bank x 16777216-word x 4-bit, m2v56s30tp is a 4-bank x 8388608-word x 8-bit, m2v56s40tp is a 4-bank x 4194304-word x 16-bit, synchronous dram, with lvttl interface. all inputs and outputs are refe... |
| Description |
256M synchronous DRAM
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| File Size |
269.73K /
49 Page |
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it Online |
Download Datasheet
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Samsung Electronic
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| Part No. |
K9K2G0816QU0M
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| OCR Text |
256m x 8 bit / 128m x 16 bit nand flash memory revision history the attached data sheets are prepared and approved by samsung electronics...word - block erase -x8 device(k9k1g08x0m): (128k + 4k)byte -x16 device(k9k1g16x0m)... |
| Description |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet
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| File Size |
833.94K /
35 Page |
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it Online |
Download Datasheet
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Price and Availability
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