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Molex Electronics Ltd.
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| Part No. |
14-44-2112 A-70475-0956
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| OCR Text |
This document was generated on 05/24/2010
PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION
Part Number: Status: Overview: Description:
0014442112 Active
cgrid__sl_products 2.54mm (.100") Pitch SLTM Insulation Displacement Conn... |
| Description |
2.54mm (.100) Pitch SL?/a> Insulation Displacement Connector Assembly, Male, Single Row, Version D, Back Ribs, for Wire Size 28, 0.38μm (15μ) Gold (Au), 12 Circuits
2.54mm (.100) Pitch SL Insulation Displacement Connector Assembly, Male, Single Row, Version D, Back Ribs, for Wire Size 28, 0.38μm (15μ) Gold (Au), 12 Circuits
Molex Electronics Ltd.
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| File Size |
151.13K /
3 Page |
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Chicago Miniature Lighting,LLC
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| Part No. |
2112 2180 1705 2181 1749
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| OCR Text |
T-1 3/4 Wire Terminal (standard)
.230 MAX.
P art Number C M1739 C M2037
.520 MAX.
Des ign V oltage 6.30 6.30 6.30 6.30 6.30 6.30 6.30 6.30 8.00 10.00 10.00 10.00 11.00 12.00 14.00 14.00 14.00 14.00 18.00 22.00 24.00 24.00 28.00 28.0... |
| Description |
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| File Size |
100.05K /
1 Page |
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Molex Electronics Ltd.
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| Part No. |
14-56-2112 A-70400-0675
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| OCR Text |
this document was generated on 05/21/2010 please check www.molex.com for latest part information part number: 0014562112 status: active overview: cgrid__sl_products description: 2.54mm (.100") pitch sl? insu... |
| Description |
2.54mm (.100) Pitch SL?/a> Insulation Displacement Connector Assembly, Female, Single Row, Version G, Positive Lock, Wire Size 24, 0.38μm (15μ) Gold (Au), 11 Circuits
2.54mm (.100) Pitch SL Insulation Displacement Connector Assembly, Female, Single Row, Version G, Positive Lock, Wire Size 24, 0.38μm (15μ) Gold (Au), 11 Circuits
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166.47K /
3 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
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| Part No. |
MRF21045 MRF21045LR3 MRF21045LSR3 MRF21045R3 MRF21045SR3
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| OCR Text |
...= 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third O... |
| Description |
RF Power Field Effect Transistors S BAND, Si, N-CHANNEL, RF POWER, MOSFET
2170 MHz, 45 W, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
546.66K /
12 Page |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3
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| OCR Text |
...= 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 3rd Ord... |
| Description |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
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| File Size |
578.61K /
12 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3
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| OCR Text |
... 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third ... |
| Description |
2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors
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| File Size |
558.64K /
12 Page |
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it Online |
Download Datasheet |
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