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Quanzhou Jinmei Electro...
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| Part No. |
BF1100WR-2015 BF1100WR-15
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| OCR Text |
... specially designed for use at 9 to 12 v supply voltage short channel transistor with high forward transfer admittance to input capacitance ratio low noise gain controlled amplifier up to 1 ghz superior cross-modulation performance duri... |
| Description |
Dual-gate MOS-FET
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| File Size |
99.58K /
14 Page |
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it Online |
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Quanzhou Jinmei Electro...
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| Part No. |
BLF542-2015 BLF542-15
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| OCR Text |
...s = 0; v ds = 28 v; f = 1 mhz - 9.4 - pf c rs feedback capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 1.7 - pf fig.4 temperature coefficient of gate-source voltage as a function of drain current, typical values. v ds = 10 v. handbook, halfp... |
| Description |
UHF power MOS transistor
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| File Size |
77.74K /
12 Page |
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it Online |
Download Datasheet |
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Quanzhou Jinmei Electro...
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| Part No. |
BAP1321-04-2015 BAP1321-04-15
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| OCR Text |
....5 - db v r = 0; f = 2450 mhz 7.9 - db | s 21 | 2 insertion loss i f = 0.5 ma; f = 900 mhz 0.27 - db i f = 0.5 ma; f = 1800 mhz 0.35 - db i f = 0.5 ma; f = 2450 mhz 0.43 - db | s 21 | 2 insertion loss i f = 1 ma; f = 900 mhz 0.21 - db i f =... |
| Description |
Silicon PIN diode
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| File Size |
63.07K /
8 Page |
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it Online |
Download Datasheet |
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