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MOTOROLA[Motorola, Inc]
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| Part No. |
MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
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| OCR Text |
...90 80 70 60 50 40 30 20 10 1880 1900 0 0 1 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz 2 3 4 Pin, INPUT POWER (WATTS) 5 6 h Pout
60 55 , DRAIN...2100 -16 -18 -20 IRL, INPUT RETURN LOSS (dB) Gps -4
15.0 14.5 14.0 G ps, POWER GAIN (dB) 13.5 13.... |
| Description |
MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
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| File Size |
399.98K /
8 Page |
View
it Online |
Download Datasheet
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Motorola, Inc. MOTOROLA[Motorola, Inc]
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| Part No. |
MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
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| OCR Text |
...40 1860 f, FREQUENCY (MHz) 1880 1900 1W 0.5 W VDD = 26 Vdc IDQ = 500 mA Pin = 6 W Pout , OUTPUT POWER (WATTS)
90 80 70 60 50 40 30 20 10 ...2100 -16 -18 -20 IRL, INPUT RETURN LOSS (dB)
15.0 14.5 14.0 G ps, POWER GAIN (dB) 13.5 13.0 12.5 ... |
| Description |
HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
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| File Size |
486.59K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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