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For 100ua-ir Found Datasheets File :: 477 Search Time::2.265ms
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				Wing Shing Computer Components
Part No.	LM385Z-2.5
OCR Text	... Stability 1 mA IR 20 mA IR = 100uA f = 20 Hz IR = 100 A 10 Hz f 10 kHz IR = 100 A, T = 1000 Hr, TA = 25C 0.1C Average Temperature IMIN IR 20 mA 20 20uA IR 1mA V(Min) V(Max) 30 13 20 2.0 20 uA (Max) 2.5 25 mV...
Description	Micropower Voltage Reference Diode
File Size	140.95K / 3 Page	View it Online	Download Datasheet

				MCC[Micro Commercial Components]
Part No.	MMBD4148CA
OCR Text	...Min 75 Max Unit Test Cond. V IR=100uA V nA uA uA pF IF=10mA DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout ...
Description	High Conductance Ultra Fast Diode 350mW
File Size	125.38K / 2 Page	View it Online	Download Datasheet

				Micro Commercial Components, Corp. MCC[Micro Commercial Components]
Part No.	MMBD4148CC
OCR Text	...Min 75 Max Unit Test Cond. V IR=100uA V nA uA uA pF IF=10mA DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout ...
Description	High Conductance Ultra Fast Diode 350mW 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
File Size	104.24K / 2 Page	View it Online	Download Datasheet

				MCC[Micro Commercial Components]
Part No.	MMBD4148SE
OCR Text	...Min 75 Max Unit Test Cond. V IR=100uA V nA uA uA pF IF=10mA DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout ...
Description	High Conductance Ultra Fast Diode 350mW
File Size	125.75K / 2 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	PBYL1025B PBYL1020B
OCR Text	... C 4 I tp D= tp T 138 100uA Tj = 25 C 2 0 T t 144 150 15 10uA 0 5 10 Average forward current, IF(AV) (A) 1uA ...IR = f(VR); parameter Tj 8 7 6 5 4 3 2 1 0 Forward dissipation, PF (W) Vo = 0.29 V Rs = 0.016 ...
Description	Rectifier diodes Schottky barrier(肖特基势垒整流二极管)
File Size	44.95K / 5 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HBAS16
OCR Text	...3) VF(4) IR CT Trr Condition IR=100uA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=0, f=1MHZ IF=IR=10mA, RL=100, measured at IR=1mA Min 75 Max. 715 855 1000 1250 1 2 6 Unit V MV mV mV mV uA pF nS HBAS16 HSMC Product Specification HI-S...
Description	HIGH-SPEED SWITCHING DIODE
File Size	36.87K / 3 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHN603S
OCR Text	...N603S 10mA min typ 1mA 100uA 10uA VDS = VGS Tj = 25 C 1uA 0 1 2 3 Gate-source voltage, VGS (V) 4 5 0 5 10 15 Gate charge, QG (nC) 20 25 Fig.13. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C ...
Description	TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver
File Size	114.99K / 7 Page	View it Online	Download Datasheet

				Hi-Sincerity Mocroelectroni... Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics] HSMC CORP.
Part No.	HMBD2003 HMBD2003C HMBD2003S
OCR Text	...mA RL=100 measured at IR=3mA IR=100uA Min 5 50 250 Max 1 1.25 100 100 100 Unit V nA pF nS V HMBD2003, HMBD2003C, HMBD2003S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-23 Dimension Diagram: L 1 3 Spec....
Description	General purpose diodes fabricated in planar technology
File Size	18.63K / 2 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	PBYL2025B PBYL2020B
OCR Text	... I tp tp 142.5 D= T t 100uA Tj = 25 C 10uA T 0 0 5 10 15 20 25 Average forward current, IF(AV) (A) 150 30 1uA...IR = f(VR); parameter Tj 15 Forward dissipation, PF (W) Vo = 0.270 V Rs = 0.00875 Ohms PBY...
Description	Rectifier diodes Schottky barrier(肖特基势垒整流二极管)
File Size	46.55K / 5 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	PBYL2025 PBYL2020
OCR Text	... I tp tp 142.5 D= T t 100uA Tj = 25 C 10uA T 0 0 5 10 15 20 25 Average forward current, IF(AV) (A) 150 30 1uA...IR = f(VR); parameter Tj 15 Forward dissipation, PF (W) Vo = 0.270 V Rs = 0.00875 Ohms PBY...
Description	Rectifier diodes Schottky barrier
File Size	43.58K / 5 Page	View it Online	Download Datasheet

For 100ua-ir Found Datasheets File :: 477 Search Time::2.265ms
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