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100nh Datasheet PDF File

For 100nh Found Datasheets File :: 637 Search Time::1.781ms
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				Mitsubishi Electric Semiconductor
Part No.	CM1600HC-34H CM1600HC-34H09
OCR Text	...V RG(on) = 1.6, Tj = 125C, Ls = 100nh Inductive load VCC = 850V, IC = 1600A, VGE = 15V RG(off) = 1.6, Tj = 125C, Ls = 100nh Inductive load VCC = 850V, IC = 1600A, VGE = 15V RG(on) = 1.6, Tj = 125C, Ls = 100nh Inductive load Min -- 4.5 --...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	62.10K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RM600HE-90S
OCR Text	...IF = 600 A di/dt = -1400 A/s Ls=100nh, Tj = 125 C Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Min -- -- -- -- -- -- -- -- Limits Typ -- -- 4.80 4.20 0.9 615 600 0.62 Max 5 30 -- -- 1.8 -- -- -- Unit mA V s A C J/P Reverse recove...
Description	HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
File Size	60.27K / 4 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DIM800ECM33-F000
OCR Text	..., RG(OFF)= 6.2 Cge = 220nF, L ~ 100nh IC = 800A, VGE = 15V, VCE = 1800V, RG(ON) = 2.7 , Cge = 220nF, L ~100nh Min Typ. 3.0 270 1050 1.3 275 1250 20 320 670 300 Max Units s ns mJ s ns mJ C C A mJ Tcase = 125 C unless stated o...
Description	IGBT Chopper Module
File Size	877.97K / 8 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DIM800XSM33-F000
OCR Text	..., RG(OFF)= 6.2 Cge = 220nF, L ~ 100nh IC = 800A, VGE = 15V, VCE = 1800V, RG(ON) = 2.7 , Cge = 220nF, L ~100nh Min Typ. 3.0 270 1050 1.3 275 1250 20 320 670 300 Max Units s ns mJ s ns mJ C C A mJ Tcase = 125 C unless stated o...
Description	Single Switch IGBT Module
File Size	277.57K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RM300DG-90S
OCR Text	...rse recovery energy (Note 2) Ls=100nh, Tj = 125 C Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt. High Voltage Diode Module May 2009 2 MITSUBISHI HIGH VOLT...
Description	HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
File Size	71.54K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RM400DG-66S
OCR Text	...rse recovery energy (Note 2) Ls=100nh, Tj = 125 C Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt. High Voltage Diode Module May 2009 2 MITSUBISHI HIGH VOLT...
Description	HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
File Size	71.12K / 4 Page	View it Online	Download Datasheet

				Murata Electronics
Part No.	LQW15AXXXXX LQW18ANR22J00D LQW2BHXXXXX LQW31HXXXXX
OCR Text	...ayer 1.6 0.8 0603 0.6nH 100nh 0.6 0.3 0201 1.0nH 27nH 1.0 0.5 0402 1.0nH 18nH 0402 1.3nH 33nH 1.6 0.8 0603 1.5nH 100nh 1.0 0.5 0402 0603 0805 1206 1206 1206 1210 1812 0603 0805 1206 1210 18...
Description	High Frequency Winding Type Air Core Coil
File Size	1,190.97K / 74 Page	View it Online	Download Datasheet

				CONSUMER MICROCIRCUITS LIMITED
Part No.	EV0171
OCR Text	... 2 1 J2 1 2 L6 C31 100nh 2 1 A 1 VO VI C9 RV1 C6 100pF C26 4.7uF(10V) C28 1uF(16V) R8 L7 AVDD1 C14 C15 R9 330R R10 47R OSCOUT TP8 C32 100pF L1 100nh 100pF C11 1 VCC3 GAIN GND3 27 PAIN 2 28 ...
Description	EvKit for CMX017
File Size	965.80K / 16 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BGC405
OCR Text	... Vr,5 C3, 100pF D2 Q2 L1,100nh RFout,6 R1 (47k) R4 (2k7) Q1 R3 10k Rx = 82Ohm for Icc=7.2mA Vc,8 Vb,3 C2, 1nF RFin,1 GND,7,2 off on Figure 1. Typical Application and Internal Circuit Remarks: 1) 2) 3)...
Description	Active Biased RF Transistor (RF MMIC) Self-Biased BFP405
File Size	119.39K / 10 Page	View it Online	Download Datasheet

For 100nh Found Datasheets File :: 637 Search Time::1.781ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |