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AT80F52 JAN2N R05T0509 ZMM6V2 00152 APE1016 20ETS08S 10250
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  00mh Datasheet PDF File

For 00mh Found Datasheets File :: 39    Search Time::2.969ms    
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    MICROSEMI[Microsemi Corporation]
Part No. APT8024LFLL APT8024B2FLL APT8024B2FLLG
OCR Text ... 4 Starting Tj = +25C, L = 2.00mh, RG = 25, Peak IL = 31A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID31A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See fi...
Description POWER MOS 7 FREDFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 238.14K  /  5 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT8024LLL APT8024B2LL APT8024B2LL_05 APT8024B2LL05
OCR Text ... 4 Starting Tj = +25C, L = 2.00mh, RG = 25, Peak IL = 31A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID31A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See fi...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 159.97K  /  5 Page

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    MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Part No. APT8030JVFR_05 APT8030JVFR APT8030JVFR05
OCR Text ...3471 4 Starting T = +25C, L = 8.00mh, R = 25, Peak I = 25A j G L 5 I - -I [Cont.], di/ = 100A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0, dt VR = 200V APT Reserves the right to change, without notice, the specifications and information con...
Description 25 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 65.15K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT9M100S APT9M100B
OCR Text ... 2 Starting at TJ = 25C, L = 46.00mh, RG = 4.7, IAS = 5A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a...
Description N-Channel MOSFET

File Size 257.43K  /  4 Page

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    IRFB5620PBF IRFB5620PBF-15

International Rectifier
Part No. IRFB5620PBF IRFB5620PBF-15
OCR Text ...ture. Starting TJ = 25C, L = 1.00mh, RG = 25, IAS = 15A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive avalanche information 2 www.irf....
Description DIGITAL AUDIO MOSFET
   Key Parameters Optimized for Class-D Audio Amplifier Applications

File Size 267.06K  /  7 Page

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    850-03-001

Qualtek Electronics Corporation
Part No. 850-03-001
OCR Text ...SCHEMATIC: L1: L2: C1: C2: R: 1.00mh 30.0uH 0.22uF 3300pF 330K Dim range (mm) 0-1 1-6 6-18 18-50 50-120 120-250 250-500 Tolerance +/(mm) 0.15 0.20 0.30 0.50 0.70 0.90 1.20 CONTROLLED Qualtek Electronics Corp. Part Number: Descript...
Description EMI FILTER

File Size 178.89K  /  1 Page

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    FMR17N60ES

Fuji Electric
Part No. FMR17N60ES
OCR Text ...5 avalanche capability i av l=2.00mh, t ch =25c 17 - - a diode forward on-voltage v sd i f =17a, v gs =0v, t ch =25c - 0.90 1.35 v reverse recovery time trr i f =17a, v gs =0v -di/dt=100a/ s, tch=25c - 0.75 - s reverse recovery charge qrr...
Description N-CHANNEL SILICON POWER MOSFET

File Size 462.68K  /  5 Page

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    ASVTX11-16.368MHZ-T ASVTX-11B-19.200MHZ-T ASVTX-11B-33.600MHZ-T ASVTX-11A-38.400MHZ-T

Abracon Corporation
Part No. ASVTX11-16.368MHZ-T ASVTX-11B-19.200mhZ-T ASVTX-11B-33.600mhZ-T ASVTX-11A-38.400mhZ-T
OCR Text ... ----- ----- 2.0 ma ~32.00mh z ----- ----- 2.5 ma ~40.00mh z v oltage control f uncti on (for asvtx - 11) control volt a ge (vcc) : f requenc y t u ning range : frequenc y t u ning transit i on : inpu...
Description
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    850-03/001

Qualtek Electronics Corporation
Part No. 850-03/001
OCR Text ...physical dimensions: l1: 1.00mh l2: 30.0uh c1: 0.22uf c2: 3300pf r: 330k
Description EMI FILTER

File Size 180.17K  /  1 Page

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