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0.57a Datasheet PDF File

For 0.57a Found Datasheets File :: 256 Search Time::3.5ms
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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF
OCR Text	...rrent IDM Max. 57 40 230 92 0.61 20 Units A W W/C V mJ A mJ PD @TC = 25C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energyd Single Pulse Avalanche Energ...
Description	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份证\u003d 57A条） 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	294.94K / 12 Page	View it Online	Download Datasheet

				GE Security, Inc. GE[General Semiconductor]
Part No.	3N250 3N251 3N252 3N248 3N246 KBP10M KBP08M 3N247 3N249 KBP005M KBP01M KBP02M KBP04M KBP06M KBP009M
OCR Text	...to 1000 Volts Case Style KBPM 0.600 (15.24) 0.125 x 45o (3.2) 0.560 (14.22) Forward Current - 1.5 Amperes FEATURES 0.460 (11.68) 0....57A per leg TA=25C TA=125C TJ=150C VRRM VRMS VDC I(AV) IFSM I2t VF IR CJ RJA RJL TJ, TSTG 50 3...
Description	Glass Passivated Single-Phase Rectifier Bridge(????荤????妗ユ?娴??) GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE
File Size	78.10K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQB70N10 FQI70N10
OCR Text	... * * * * * 57A, 100V, RDS(on) = 0.023 @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 150 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G S G!...
Description	100V N-Channel MOSFET
File Size	643.99K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
Part No.	FQP70N10 FAIRCHILDSEMICONDUCTORCORP-FQP70N10J69Z
OCR Text	... * * * * * 57A, 100V, RDS(on) = 0.023 @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 150 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ! " G! GDS !"...
Description	CAP 100PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 100V N-Channel MOSFET
File Size	635.09K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	FA57SA50LC
OCR Text	...e D VDSS = 500V RDS(on) = 0.08 G ID = 57A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and...
Description	HEXFET Power MOSFET
File Size	127.88K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor International Rectifier
Part No.	IRLM220A IRLM220ATF
OCR Text	...) @ VDS = 200V Lower RDS(ON) : 0.609 (Typ.) IRLM220A BVDSS = 200 V RDS(on) = 0.8 ID = 1.13 A SOT-223 2 1 3 1. Gate 2. Drain 3...57A VDS=40V,ID=0.57a (4) (4) Electrical Characteristics (TC=25C unless otherwise specified) Sym...
Description	200V N-Channel A-FET Advanced Power MOSFET HEXFET Power MOSFET
File Size	240.81K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PH50S
OCR Text	... 20 270 200 80 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Paramete...57A See Fig.2, 5 V -- IC = 33A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- ...
Description	1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=1.47V @Vge=15V Ic=33A)
File Size	127.42K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP3710
OCR Text	...d D VDSS = 100V RDS(on) = 0.025W G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced process...57A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rdson）\u003d 0.025W，身份证\u003d 57A条） HEXFET? Power MOSFET Power MOSFET(Vdss=100V Rds(on)=0.025W Id=57A)
File Size	181.20K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGPH50S
OCR Text	...0 20 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Paramete...57A See Fig. 2, 5 -- 2.0 -- IC = 33A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -13 -- mV/C VCE ...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	39.64K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT60M90JN
OCR Text	0.090 "UL Recognized" File No. E145592 (S) ISOTOP(R) POWER MOS IV (R) MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Vol...
Description	POWER MOS IV 600V 57A 0.090 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	60.21K / 4 Page	View it Online	Download Datasheet

For 0.57a Found Datasheets File :: 256 Search Time::3.5ms
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