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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9125NR1 MRF6S9125 MRF6S9125MBR1 MRF6S9125MR1 MRF6S9125NBR1
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| OCR Text |
...th = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20.2 dB Drain Efficiency -- 31% ACPR @ 750 kHz Offset = - 47.1 dBc ...921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 40% (Typ) Spectral Regrowth @ 400 kHz Offset ... |
| Description |
RF Power Field Effect Transistors
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| File Size |
480.38K /
16 Page |
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it Online |
Download Datasheet
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9130HSR3 MRF6S9130HR3
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| OCR Text |
...th = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 19.2 dB Drain Efficiency -- 30.5% ACPR @ 750 kHz Offset -- - 48.1 d...921 - 960 MHz) Power Gain -- 18 dB Drain Efficiency -- 63% GSM EDGE Application * Typical GSM EDGE P... |
| Description |
RF Power Field Effect Transistors
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| File Size |
467.46K /
12 Page |
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it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
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| Part No. |
MW4IC915MBR1 MW4IC915GMBR1 MW4IC915
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| OCR Text |
...40 mA Symbol RJC 1.48 Value 65 -0.5. +15 -65 to +175 175 Unit Vdc Vdc C C
THERMAL CHARACTERISTICS
Max Unit C/W
1.59
Freescale Semi...921-960 MHz Output Power at 1dB Compression Point P1dB Gps IRL EVM SR1 SR2 -- -- -- -- -- -- -- 20 ... |
| Description |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
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| File Size |
665.04K /
16 Page |
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it Online |
Download Datasheet |
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Price and Availability
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