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				Renesas Electronics Corporation
Part No.	RJK60S7DPK-m0 RJK60S7DPK-m0-T0
OCR Text	m0 600v -30a - sj mos fet high speed power switching features ? superjunction mosfet ? low on-resistance r ds(on) = 0.100 ? typ. (at i d = 15 a, v gs = 10 v, ta = 25 ? c) ? high speed switching tf = 15 ns typ. (at i d = ...
Description	600V -30A - SJ MOS FET High Speed Power Switching
File Size	83.18K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH30H2DPK-m0
OCR Text	m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage: v ce(sat) = 1.4 v typ ? high speed switching: t r = 100 ns ty...
Description	Silicon N Channel IGBT High speed power switching
File Size	146.96K / 7 Page	View it Online	Download Datasheet

				PANDUIT CORP.
Part No.	SG200S-m0 SG100M-C SG100M-C0 SG100M-M SG100M-m0 SG150I-C SG150I-C0 SG150I-M SG150I-m0 SG200S-C0
OCR Text	...000 1000 50000 sg100m-c0 sg100m-m0 weather resistant nylon 6.6 4.2 (106) .118 (3.0) .038 (1.0) 1.00 (25) 18 (80) 100 1000 1000 50000 sg150i-c sg150i-m nylon 6.6 6.2 (157) .168 (4.3) .040 (1.0) 1.50 (38) 40 (178) gts, gtsl, gs2b, pts, ppts, ...
Description	SUPER-GRIP Cable Ties & Cable Tie Mounts
File Size	283.20K / 4 Page	View it Online	Download Datasheet

				Renesas
Part No.	RJP63F3DPP-m0
OCR Text	m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h series) ? low collector to emitter saturation voltage v ce(sat) = 1.7 v typ ? high speed switching tf = 100 ns typ ?...
Description	N-Channel IGBT
File Size	235.22K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK6054DPP-m0 RJK6054DPP-m0-T2
OCR Text	M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1801-0100 Rev.1.00 Jul 02, 2009 Features * Low on-resistance * Low leakage current * High speed switching Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-...
Description	Silicon N Channel MOS FET High Speed Power Switching 16 A, 600 V, 0.72 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220FL, 3 PIN
File Size	77.38K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP30H2DPK-m0
OCR Text	m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage: v ce(sat) = 1.4 v typ ? high speed switching: t f = 100 ns ty...
Description	Silicon N Channel IGBT High speed power switching
File Size	155.14K / 7 Page	View it Online	Download Datasheet

				Renesas
Part No.	RJP30H2DPK-m0
OCR Text	m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage: v ce(sat) = 1.4 v typ ? high speed switching: t f = 100 ns ty...
Description	N-Channel Power MOSFET
File Size	215.90K / 7 Page	View it Online	Download Datasheet

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