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-600v Datasheet PDF File

For -600v Found Datasheets File :: 16332 Search Time::1.485ms
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				International Rectifier
Part No.	IR2117 IR2117STR
OCR Text	600v tolerant to negative transient voltage dv/dt immune ? gate drive supply range from 10 to 20v ? undervoltage lockout ? cmos schmitt-triggered inputs with pull-down ? output in phase with input (ir2117) or out of phase with input (ir2118...
Description	Gate drive supply range from 10 to 20V 0.5 A BUF OR INV BASED MOSFET DRIVER, PDSO8
File Size	261.00K / 18 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2110E6
OCR Text	...operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground 5V...
Description	HIGH AND LOW SIDE DRIVER
File Size	306.76K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2110L6
OCR Text	...operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground 5V...
Description	HIGH AND LOW SIDE DRIVER
File Size	337.18K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text	... Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic ...
Description	HIGH AND LOW SIDE DRIVER
File Size	218.79K / 16 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DIM200WKS12-A00009
OCR Text	...recovery energy IF = 200A, VR = 600V, dlF/dt = 2300A/s Test Conditions IC = 200A VGE = 15V VCE = 600V RG(ON) = 4.7 L RG(OFF) =4.7 70nH Min. Typ. 600 50 20 240 95 25 2 30 150 13 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125 C unless s...
Description	IGBT Chopper Module - Upper Arm Control
File Size	203.02K / 8 Page	View it Online	Download Datasheet

				Silan Microelectronics Joint-stock
Part No.	SVD8N60F SVD8N60T
OCR Text	600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the i...
Description	8A, 600V NCHANNEL MOSFET
File Size	470.72K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGA15N120AND FGA15N120ANDTU
OCR Text	... 1 10 100 1000 0 10 20 30 vcc = 600v load current : peak of square wave duty cycle : 50% tc = 100 powe dissipation = 40w load current [a] frequency [khz] 0 4 8 12 16 20 0 4 8 12 16 20 24a 15a common emitter t c = 25 i c = 7.5a c...
Description	High speed switching
File Size	595.40K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	MOC3162-M MOC3061-M MOC3062-M MOC3063-M MOC3163 MOC3163-M MOC3063TVM MOC3162SM MOC3162SR2M MOC3162SR2VM MOC3061 MOC3162TM MOC3162VM MOC3162SVM MOC3162TVM MOC3163SM MOC3163SR2M MOC3163SR2VM MOC3163SVM MOC3163TM MOC3163TVM MOC3163VM MOC3061SM MOC3061SR2M MOC3061SR2VM MOC3061SVM MOC3061TM MOC3061TVM MOC3061VM MOC3062SM MOC3062SR2M MOC3062SR2VM MOC3062SVM MOC3062TM MOC3062TVM MOC3062VM MOC3063SR2M MOC3063SR2VM MOC3063SVM MOC3063TM MOC3063VM MOC3063SM
OCR Text	600V PEAK) MOC3061-M MOC3062-M PACKAGE MOC3063-M MOC3162-M MOC3163-M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 1 N/C 3 CATHODE 2 5 NC* 1 ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) 6 ...
Description	6-PIN DIP ZERO-CROSS PHOTOTRIAC DRIVER OPTOCOUPLER (600V PEAK)
File Size	526.56K / 10 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTCV50H60T3G
OCR Text	600V ; IC = 50A @ Tc = 80C CoolMOSTM Q2, Q4: VCES = 600V ; IC = 49A @ Tc = 25C 13 Q1 CR1 18 19 22 23 Q2 14 Q3 CR3 11 10 7 8 Q4 4 3 Application * Solar converter Features * Q2, Q4 CoolMOSTM - Ultra low RDSon - Low Miller capacitance...
Description	Full - Bridge NPT & Trench Field Stop? IGBT Power module Full - Bridge NPT & Trench Field Stop垄莽 IGBT Power module
File Size	346.78K / 9 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TLP250
OCR Text	...bol tpLH tpHL tr tf CMH 7 VCM = 600V, IF = 8mA VCC = 30V, Ta = 25C VCM = 600V, IF = 0mA VCC = 30V, Ta = 25C 6 IF = 8mA (Note 7) VCC1 = +15V, VEE1 = -15V RL = 200 Test Cir- cuit Test Condition Min. -5000 Typ.* 0.15 0.15 Max. 0.5 0.5 ...
Description	TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
File Size	149.25K / 8 Page	View it Online	Download Datasheet

For -600v Found Datasheets File :: 16332 Search Time::1.485ms
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