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transistor-12a Datasheet PDF File

For transistor-12a Found Datasheets File :: 1135 Search Time::0.907ms
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				IRF[International Rectifier] Vishay Intertechnology, Inc.
Part No.	IRG4PC30KD IRG4PC30KD-EPBF
OCR Text	TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start...12A See Fig. 13 IC = 12A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherw...
Description	600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 28 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
File Size	177.70K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PC30UD
OCR Text	TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >...12A n-cha nn el Benefits * Generation -4 IGBT's offer highest efficiencies available * IGBT's...
Description	600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
File Size	209.80K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PC30U IRG4PC30UPBF
OCR Text	TRANSISTOR Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Generati...12A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's opti...
Description	600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
File Size	144.55K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4PC30W IRG4PC30WPBF
OCR Text	TRANSISTOR Features * Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications * Industry-benchmark ...12A n-channel Benefits * Lower switching losses allow more cost-effective operation than powe...
Description	Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
File Size	122.11K / 8 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOU413 AOU413L
OCR Text	Transistor General Description The AOU413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resis...12A (VGS = -10V) RDS(ON) < 45m (VGS = -10V) RDS(ON) < 69m (VGS = -4.5V) D Top View Drain Conne...
Description	P-Channel Enhancement Mode Field Effect Transistor
File Size	59.57K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4406AL
OCR Text	Transistor General Description The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device...12A RDS(ON) < 11.5m RDS(ON) < 15.5m (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halog...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	149.23K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOD444
OCR Text	Transistor General Description The AOD444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Th...12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VD...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	148.63K / 5 Page	View it Online	Download Datasheet

For transistor-12a Found Datasheets File :: 1135 Search Time::0.907ms
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