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Infineon
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| Part No. |
BSM35GD120DN2 035D12N2
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| OCR Text |
...80 C
Pulsed collector current, tp = 1 ms
ICpuls
100 70
TC = 25 C TC = 80 C
Power dissipation per IGBT
Ptot
280
W + 150 -55 ....39
Rise time
tr
60 120
VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39
Turn-off delay time
... |
| Description |
IGBT Power Module From old datasheet system
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| File Size |
123.80K /
9 Page |
View
it Online |
Download Datasheet
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TE Connectivity, Ltd. SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BSM35GD120D2 035D12D2 C67076-A2506-A17
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| OCR Text |
...80 C
Pulsed collector current, tp = 1 ms
ICpuls
100 70
TC = 25 C TC = 80 C
Power dissipation per IGBT
Ptot
280
W + 150 -55 ....39
Rise time
tr
60 120
VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39
Turn-off delay time
... |
| Description |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块(功率模相全桥包括快速滑行二极管 From old datasheet system
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| File Size |
137.33K /
9 Page |
View
it Online |
Download Datasheet
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BSM35GB120DN2 035B12N2 C67070-A2111-A70
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| OCR Text |
...80 C
Pulsed collector current, tp = 1 ms
ICpuls
100 70
TC = 25 C TC = 80 C
Power dissipation per IGBT
Ptot
280
W + 150 -55 ....39
Rise time
tr
60 120
VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39
Turn-off delay time
... |
| Description |
PTSE 25C 25#16 SKT RECP From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area)
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| File Size |
110.29K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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