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  tp-39 Datasheet PDF File

For tp-39 Found Datasheets File :: 6215    Search Time::1.593ms    
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    BSS223PW

INFINEON[Infineon Technologies AG]
Part No. BSS223PW
OCR Text ...nt thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 BSS 223PW K/W A tp = 180.0s 10 2 /I D ID R DS ( o...39 A, VGS = -4.5 V 1.6 BSS 223PW 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V...
Description OptiMOS -P Small-Signal-Transistor 的OptiMOS磷小信号晶体

File Size 72.89K  /  8 Page

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    2N3637 2N36342 2N3635 2N3634UB 2N3634L JANTXV2N3634L

Microsemi Corporation
MICROSEMI CORP-LAWRENCE
Part No. 2N3637 2N36342 2N3635 2N3634UB 2N3634L JANTXV2N3634L
OCR Text ...8 mm) radius of true position (tp) at a maximum material condition (mmc) relative to the tab at mmc. the device may be measured by direc...39). 10. for transistor types 2n3634l through 2n3637l, ll is 1.500 inches (38.10 mm) minimum, an...
Description PNP SILICON SWITCHING TRANSISTOR
1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5

File Size 165.86K  /  5 Page

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    Infineon
Part No. BSM35GD120DN2 035D12N2
OCR Text ...80 C Pulsed collector current, tp = 1 ms ICpuls 100 70 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 280 W + 150 -55 ....39 Rise time tr 60 120 VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Turn-off delay time ...
Description IGBT Power Module
From old datasheet system

File Size 123.80K  /  9 Page

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    TE Connectivity, Ltd.
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSM35GD120D2 035D12D2 C67076-A2506-A17
OCR Text ...80 C Pulsed collector current, tp = 1 ms ICpuls 100 70 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 280 W + 150 -55 ....39 Rise time tr 60 120 VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Turn-off delay time ...
Description IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块(功率模相全桥包括快速滑行二极管
From old datasheet system

File Size 137.33K  /  9 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSM35GB120DN2 035B12N2 C67070-A2111-A70
OCR Text ...80 C Pulsed collector current, tp = 1 ms ICpuls 100 70 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 280 W + 150 -55 ....39 Rise time tr 60 120 VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Turn-off delay time ...
Description PTSE 25C 25#16 SKT RECP
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area)

File Size 110.29K  /  9 Page

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    CQ39BS CQ39MS CQ39DS CQ39NS

CENTRAL[Central Semiconductor Corp]
Part No. CQ39BS CQ39MS CQ39DS CQ39NS
OCR Text ...using (t=10ms) Peak Gate Power (tp=10s) Average Gate Power Dissipation Peak Gate Current (tp=10s) Storage Temperature Junction Temperature T...39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) GATE 3) MT2 MARKING CODE: FULL PART NUMBER D...
Description Leaded Thyristor TRIAC
TRIAC 4.0 AMP, 200 THRU 800 VOLTS

File Size 75.44K  /  2 Page

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    BZV85-C10 BZV85-C11 BZV85-C12 BZV85-C13 BZV85-C15 BZV85-C16 BZV85-C18 BZV85-C20 BZV85-C22 BZV85-C24 BZV85-C27 BZV85-C30

NXP Semiconductors N.V.
Part No. BZV85-C10 BZV85-C11 BZV85-C12 BZV85-C13 BZV85-C15 BZV85-C16 BZV85-C18 BZV85-C20 BZV85-C22 BZV85-C24 BZV85-C27 BZV85-C30 BZV85-C33 BZV85-C36 BZV85-C39 BZV85 BZV85-C6V8
OCR Text ...wer dissipation square wave; tp = 100 s [3] Device mounted on a Printed-Circuit Board (PCB) with 1 cm2 copper area per lead. If the...39 43 47 51 56 62 68 75 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16....
Description Voltage regulator diodes

File Size 53.56K  /  10 Page

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    E5017 E2023 E4005 23Z114SM 23Z435SM PE-65727 PE-65726 PE-68042 PE-68041

Pulse A Technitrol Company
Pulse A Technitrol Comp...
Part No. E5017 E2023 E4005 23Z114SM 23Z435SM PE-65727 PE-65726 PE-68042 PE-68041
OCR Text ... cd+ rd - rd + td - td + tpdon1 tp dop2 tp don2 tp dop3 tp don3 tp dop4 tp don4 tpdip1 tpdin1 tp dip2 tp din2 tp dip3 tp din3 tp dip4 tp din...39 .004/0,10 .340 max 8,64 weight . . . . . . . . . . . .0.22 grams tube . . . . . . . . . . . . ...
Description LAN ISOLATION TRANSFORMER CATALOG

File Size 353.19K  /  11 Page

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    GDZJ4.3 GDZJ10 GDZJ11 GDZJ12 GDZJ13 GDZJ15 GDZJ16 GDZJ18 GDZJ2 GDZJ2.0 GDZJ2.2 GDZJ2.4 GDZJ2.7 GDZJ20 GDZJ22 GDZJ24 GDZJ

Diotech Company.
Part No. GDZJ4.3 GDZJ10 GDZJ11 GDZJ12 GDZJ13 GDZJ15 GDZJ16 GDZJ18 GDZJ2 GDZJ2.0 GDZJ2.2 GDZJ2.4 GDZJ2.7 GDZJ20 GDZJ22 GDZJ24 GDZJ5.1 GDZJ4.7 GDZJ43 GDZJ47 GDZJ5.6 GDZJ51 GDZJ56 GDZJ9.1 GDZJ3.0 GDZJ8.2 GDZJ6.8 GDZJ6.2
OCR Text ...stance vs. Z-Voltage 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse RthJA=300K/W T=Tjmax-Tamb 10 tp/T=0.1 tp/T=0.02 tp/T=0.05 tp/T=0.01 iZM =(-VZ+(VZ2+4rzj x T/Zthp)1/2 zj) )/(2r 1 10-1 100 101 tp - Pulse Length ( ms...
Description 500mW EPITAXIAL ZENER DIODE

File Size 1,953.65K  /  5 Page

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For tp-39 Found Datasheets File :: 6215    Search Time::1.593ms    
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